Structure–Property Correlations in a Ce-Doped (Lu,Gd)<sub>2</sub>SiO<sub>5</sub>:Ce Scintillator

Sidletskiy, O.; Belsky, A.; Gektin, A.; Neicheva, S.; Kurtsev, D.; Kononets, V.; Dujardin, Christophe; Lebbou, Kheirréddine; Zelenskaya, O. V.; Тарасов, В. А.; Беликов, К. Н.; Grinyov, B.

doi:10.1021/cg300608t

Cited by 63 publications

(38 citation statements)

References 35 publications

(62 reference statements)

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“…Typical scintillator materials are Ce 3+ -doped crystals, such as Ce 3+ :Lu 2 SiO 5 and Ce 3+ :LaBr 3 . Both crystals present some drawbacks, such as difficulty for crystal growth and hygroscopicity, respectively 7,8 . Multicomponent garnet crystals doped with Ce 3+ are also used in medical imaging and gamma spectroscopy due to high light yield and high density, but with poorer timing performance compared with lutetium-yttrium oxyorthosilicate crystals 9 .…”

Section: Introductionmentioning

confidence: 99%

Single crystal growth, optical absorption and luminescence properties under VUV-UV synchrotron excitation of type III Ce3+:KGd(PO3)4, a promising scintillator material

Adell¹,

Solé²,

Pujol³

et al. 2018

Sci Rep

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Scintillator materials have gained great interest for many applications, among which the medical applications stand out. Nowadays, the research is focused on finding new scintillator materials with properties that suit the needs of each application. In particular, for medical diagnosis a fast and intense response under high-energy radiation excitation is of great importance. Here, type III Ce3+-doped KGd(PO3)4 single crystals with high crystalline quality are grown and optically characterized as a new promising scintillator material. The 4f → 5d electronic transitions of Ce3+ are identified by optical absorption. The optical absorption cross section of Ce3+ for the electronic transition from the 2F5/2 to the 5d1 level is 370 × 10−20 cm2. The luminescence of KGd0.996Ce0.004(PO3)4 crystal by exciting the 5d levels of Ce3+ with VUV-UV synchrotron radiation shows down-shifting properties with strong emissions at 322 and 342 nm from the 5d1 to 2F5/2 and 2F7/2 levels of Ce3+ with a short decay time of ~16 ns, which is very suitable for scintillator applications. Moreover, these intense emissions are also observed when Gd3+ is excited since an energy transfer from Gd3+ to Ce3+ exists.

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Section: Introductionmentioning

confidence: 99%

Single crystal growth, optical absorption and luminescence properties under VUV-UV synchrotron excitation of type III Ce3+:KGd(PO3)4, a promising scintillator material

Adell¹,

Solé²,

Pujol³

et al. 2018

Sci Rep

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“…More detailed study of the Ce-doped mixed LSOGSO crystals regarding the growth process and relation between the structure and scintillation characteristics has been published recently [58]. The occurrence of two Ce 3+ luminescent centers in LSO, YSO, and GSO has been established in the early 1990's [56] given to two Lu or Gd sites in the structure mentioned above.…”

Section: Growth Of Lumentioning

confidence: 99%

Czochralski Growth and Properties of Scintillating Crystals

2013

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The Czochralski method is one of the very few melt growth techniques that are industry friendly when considering the combination of quality, dimensions, and cost of the produced crystals suitable for their commercialization in scintillation detectors. This method is one of the oldest and most developed crystal growth processes regarding an adequate understanding the physical phenomena observed during solidication process and its practical expansion especially in the industrial scale production. It allows controllable formation of single-crystalline cylindrical ingots of various inorganic scintillation materials. The review summarizes recent progress on the Czochralski growth of a number of scintillation materials. The oxide crystals are mainly considered including the Ce and Pr--doped RE3Al5O12, RE = Y, Lu, aluminum garnets and newly discovered ultraecient Ce-doped Gd3(Ga,Al)5O12 multicomponent garnet, high density PbWO4 and CdWO4 tungstates, Ce-doped RE2SiO5, RE = Y, Gd, Lu, oxyorthosilicates and (Y,Lu)AlO3 aluminum perovskites and nally the classical Bi4Ge3O12 scintillator. Additionally, the details of the growth of other practically important non-oxide crystals, namely the Ce and Eu-doped LiCaAlF6 neutron and ultraecient Ce-doped LaBr3 scintillators, are discussed. The potential of novel micro-pulling down growth method is briey described in the combinatorial search for new scintillator materials. Selected luminescence and scintillation characteristics including the spectra and decay kinetics, light yield and radiation resistance are also illustrated and overviewed.

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“…There are several mixed scintillators among them: BaBrI:Eu with the light yield of up to 112000 photlMeV, BaBrCI:Eu with light yield of 52000 phot/MeV, BaC1T:Eu with light yield of 54000 phot/MeV, BaFI:Eu with light yield of 55000 phot/MeV [1]. Improvement of light yield was achieved in oxide scintillators as well, for, example, light yield of up to 46000 phot/MeV was reported for crystals of (Y,Lu,GdMAlyGal_x)sOI2 family [2,3], and light yield of 34000 phot/MeV was demonstrated with LU2xGdz_2xSiOs:Ce (LGSO:Ce) [4].…”

Section: Introductionmentioning

confidence: 97%

“…ll. PROCEDURE OF EXPERIMENTAL DATA EVALUATION To evaluate the behavior of light yield in mixed crystals, the available literature data on 15 systems[2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] were analyzed. Only the systems were considered where light yield (luminosity) in mixed crystals was systematically studied.…”

mentioning

confidence: 99%

Phenomenological approach to prediction of scintillation yield in mixed crystals

Sidletskiy

Gektin

Grinyov

et al. 2014

International Conference on Oxide Materials for Electronic Engineering - Fabrication, Properties and Applications (OMEE-2014)

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Behavior of light yield in wide range of inorganic scintillation crystals formed by isovalent substitution of anions or cations is summarized. The correlations between improvement of light yield in mixed crystals, and the ratios of ionic radii and atomic weights of the substituted atoms, as well as the bandgap diffe rence between the components of mixed crystal, have been analyzed. It is presumed that non-monotonous dependence of light yield on components ratio in mixed scintillators is called by modulation of energy structure and limitation of carrier migration length due to spatial inhomogeneity in crystal. Phenomenological approach to prediction of light yield in mixed scintillation crystals has been proposed.

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Structure–Property Correlations in a Ce-Doped (Lu,Gd)₂SiO₅:Ce Scintillator

Cited by 63 publications

References 35 publications

Single crystal growth, optical absorption and luminescence properties under VUV-UV synchrotron excitation of type III Ce3+:KGd(PO3)4, a promising scintillator material

Single crystal growth, optical absorption and luminescence properties under VUV-UV synchrotron excitation of type III Ce3+:KGd(PO3)4, a promising scintillator material

Czochralski Growth and Properties of Scintillating Crystals

Phenomenological approach to prediction of scintillation yield in mixed crystals

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Structure–Property Correlations in a Ce-Doped (Lu,Gd)2SiO5:Ce Scintillator

Cited by 63 publications

References 35 publications

Single crystal growth, optical absorption and luminescence properties under VUV-UV synchrotron excitation of type III Ce3+:KGd(PO3)4, a promising scintillator material

Single crystal growth, optical absorption and luminescence properties under VUV-UV synchrotron excitation of type III Ce3+:KGd(PO3)4, a promising scintillator material

Czochralski Growth and Properties of Scintillating Crystals

Phenomenological approach to prediction of scintillation yield in mixed crystals

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Structure–Property Correlations in a Ce-Doped (Lu,Gd)₂SiO₅:Ce Scintillator