STT-RAM read stability in DRAM operating region

Kazama, H.; Kawahara, Takayuki

doi:10.1109/nvmts.2015.7457486

Cited by 4 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the spin Hall effect used for writing does not occur in reading, it was said that only STT works like STT-MRAM on reads [1,3]. For STT-MRAM, it is optimal to write in a low-speed range of 10 ns or more and read in a high-speed range of 10 ns or less [12]. Therefore, the read reliability of SOT-MRAM is not a problem in a high-speed range of 10 ns or less in this way of thinking.…”

Section: Proposed Read Reliability Modelmentioning

confidence: 99%

See 1 more Smart Citation

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Kishi

Yamada

et al. 2022

IEEE Trans. Magn.

View full text Add to dashboard Cite

We propose a read-reliability model to construct a bi-directional stabilized spin-orbit-torque magnetoresistive random-access memory (SOT-MRAM) structure. Since this model withstands magnetization switching with 10 times the current compared with the conventional SOT-MRAM structure, it enables low power-consumption operation while maintaining read reliability. We used various materials with different axes of easy magnetization as ferromagnetic materials in the proposed model, and confirmed that all the materials had disturbance reduction of 10 times or more. The magnitude of the coercive force of the ferromagnetic material affected this reduction. We also evaluated the effectiveness of the proposed model regarding disturbance reduction for various device shapes and found there were differences in this effectiveness because the behavior of magnetization switching differs depending on the shape and that vortex magnetization affects the model. However, considering the array configuration of the proposed model, the number of memory cells was limited to about 1000; therefore, a more optimal configuration is required.

show abstract

Section: Proposed Read Reliability Modelmentioning

confidence: 99%

“…The read disturbance by pSOT needs to be considered to evaluate the read reliability of SOT-MRAM. In the readreliability model of STT-MRAM, the thermal-stability coefficient Δ is expressed as [12]:…”

Section: B New Read-disturb Mode In Sot-mrammentioning

confidence: 99%

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Kishi

Yamada

et al. 2022

IEEE Trans. Magn.

View full text Add to dashboard Cite

show abstract

“…2) Power-saving devices using spintronics, such as spin-transfer torque magnetoresistive random access memory. [3][4][5][6] and spin-orbit torque magnetoresistive random access memory, [7][8][9][10] have also been investigated. As mentioned above, spintronics materials are being investigated for use in power generation and power-saving devices to achieve a sustainable society.…”

Section: Introductionmentioning

confidence: 99%

Evaluation and study of spin Seebeck effect in Pt/Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ and Pt/Y₃Fe₅O₁₂/sapphire systems

Ke¹,

Yamamoto

Kawahara³

2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Utilization of the spin Seebeck effect, a method for obtaining clean natural energy, is attracting more and more attention. We investigated the spin Seebeck voltage in relation to the saturation magnetization in yttrium iron garnet (YIG). We found that it is not proportional to saturation magnetization in YIG, indicating the existence of spin-current conductance in YIG. Pt/YIG samples with the same interface roughness and different structures exhibited different spin Seebeck voltages. The difference in the minimum YIG thicknesses for the saturation of the spin Seebeck voltage of Pt/YIG/gadolinium gallium garnet and Pt/YIG/sapphire structures was estimated on the basis of the relationship between the proportionality constant and the thickness dependence. The crystallinity of the YIG on these two substrates was investigated by X-ray diffraction spectrum observation. The spin-current conductance in Pt/YIG/substrates was found to be affected by the crystallinity of the YIG films.

show abstract

Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM

Yamada

Kishi

Kawahara

2022

2022 IEEE International Memory Workshop (IMW)

View full text Add to dashboard Cite

STT-RAM read stability in DRAM operating region

Cited by 4 publications

References 3 publications

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Evaluation and study of spin Seebeck effect in Pt/Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ and Pt/Y₃Fe₅O₁₂/sapphire systems

Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM

Contact Info

Product

Resources

About

STT-RAM read stability in DRAM operating region

Cited by 4 publications

References 3 publications

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Evaluation and study of spin Seebeck effect in Pt/Y3Fe5O12/Gd3Ga5O12 and Pt/Y3Fe5O12/sapphire systems

Bi-directional read method to reduce SOT-specific read disturbance for highly reliable SOT-MRAM

Contact Info

Product

Resources

About

Evaluation and study of spin Seebeck effect in Pt/Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ and Pt/Y₃Fe₅O₁₂/sapphire systems