Studies on the deep‐level defects in CdZnTe crystals grown by travelling heater method

Abstract

3 Results and discussion The sentence "The I-V results shown in Fig. 3 indicate that high resistivity of $10 9 V cm is obtained." is replaced with the sentences "The I-V results shown in Fig. 3 indicate that high resistivity of $10 9 V cm is obtained, which is different from the Hall resistivity shown in Table 2. For high resistive CZT, the surface states of samples may influence much in the Hall measurement. Therefore, Hall resistivity and carrier concentration taken from the Hall measurements are only used qualitatively to indicate difference from the tip to tail part of the as-grown ingot. The bulk resistivity used here was by I-V analysis, which we think can reflect more clearly genuine resistivity for high resistive CZT."The sentences "The mobility for electrons is obtained by the expression for mobility [2], which is mwhere d is the thickness of the detector, t R is the carrier transit time, and E is the electric field strength)." are added in the front of the sentence "As shown in Fig. 4, the mobility for electrons increases significantly from 634 AE 26 cm 2 V À1 s À1 in the tip sample to 860 AE 10 cm 2 V À1 s À1 in the tail sample," References