Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Abstract

MOSFET trarrsistors may be fabricated witla a variety of gate geometries. The ~a~~o i~ shape provides new interesting one. Ethis nonstandard geometry is made dependent on the biasing condition , original behavior and new I -ST characteristics are expected to be obtained . phis paper presents a shady and characterization of this new device *and shows that it provides a voltage ~0~~~~1~ negative resistance . It is seen to have m y noticeable advantages over those devices which have been already known . This new negative resistance fmd a wide areas of applications in comiunicatisns , m~$ u r e m e~t s and instrumentation .It can be used to build up a super selective tank circuits which c m be entirely integrated using MOSF" technology.