Study of Cu gettering to cavities in separation by implantation of oxygen substrates

Zhang, Miao; Lin, Chenglu; Hemment, P.L.F.; Gutjahr, Karsten; Gösele, U.

doi:10.1063/1.120907

Cited by 12 publications

(7 citation statements)

References 11 publications

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“…However, our previous work has demonstrated that Cu precipitate indeed form in the cavities when the amount of trapped Cu exceeds the number of trapping sites. 24 Comparing the bulk Si with SIMOX after 700°C annealing, the amount of Cu trapped in the microcavity band in SIMOX is much less than that in bulk Si. This is due to the gettering of the intrinsic defects at the BOX interfaces in SIMOX.…”

Section: Resultsmentioning

confidence: 99%

Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

Zhang

Zeng

Chu

et al. 1999

Journal of Applied Physics

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Microcavities formed by H+ and He+ implantation and subsequent annealing are effective gettering sites for transition metal impurities in silicon. However, gettering in silicon-on-insulator (SOI) materials is quite different from that in silicon. In this work, we investigate the gettering of Cu to these microcavities in silicon, separation by implantation of oxygen (SIMOX) and bonded/ion-cut SOI wafers. Our data indicate that He+ implantation in the high dose regime (0.2–1×1017 cm−2) creates a wide band of microcavities near the projected range without causing blistering on the sample surface. On the other hand, the implantation dose of H+ needed for stable microcavity formation is relatively narrow (3–4×1016 cm−2), and this value is related to the projected range. The different behavior of H and He in silicon is discussed and He implantation is more desirable with regard to impurity gettering. Cu is implanted into the surface region of the Si and SOI samples, followed by annealing at 700 and 1000 °C. Our results indicate that the microcavities can effectively getter a high dose of Cu (2.5×1015 cm−2) at 700 °C in bulk Si wafer, but higher temperature annealing is needed for the effective gettering in SIMOX. Gettering of Cu by the intrinsic defects at or beneath the buried oxide interface of the SIMOX is observed at 700 °C, but no trapped impurities are observed after 1000 °C annealing in the samples in the presence of microcavities. Almost all of the 1×1014 cm−2 Cu implanted into the Si overlayer of the bonded/ion-cut SOI diffuse through the thermally grown oxide layer and are captured by the cavities in the substrate after annealing at 1000 °C.

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Section: Resultsmentioning

confidence: 99%

Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

Zhang

Zeng

Chu

et al. 1999

Journal of Applied Physics

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“…The accumulation of indium atoms at the BOX-Si interfacial region can be attributed to the indium segregation into this region possessing a substantially lower stoichiometry and effective damage and the dangling Si bonds in SiO x similar to the behavior of some metal atoms in this BOX region in the SIMOX as reported before. 27 Furthermore, the high-density oxygen vacancies in the BOX layer are also expected to play an important role in the diffusion of indium atoms from the top Si-BOX interface into the underlying BOX layer. It is found that the oxygen-vacancy defect (E' center) generation sensitivity is fairly constant throughout the entire BOX layer with a pronounced decline toward the BOX-substrate interface.…”

Section: Resultsmentioning

confidence: 99%

Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen

Chen

Zhu

et al. 2004

Journal of Applied Physics

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The diffusion of indium in both the top silicon and the buried oxide (BOX) layers in separation by implantation of oxygen (SIMOX) is investigated. For all indium-implanted samples, there is a significant redistribution of indium atoms from the top Si-BOX interface toward the bottom BOX-Si interface, thereby affecting the indium concentrations in the two silicon-BOX interfaces. In the case of relatively high-dose and high-energy indium implantation (1 ϫ 10 14 cm −2 at 200 keV), an anomalous segregation of indium is observed in both the bulk Si and the SIMOX substrates. However, there is a notable transportation of indium atoms from the top Si layer toward the bottom BOX-Si interface in the SIMOX, thereby affecting not only the indium concentrations in the two silicon-BOX interfaces but also the indium distribution in the top silicon layer. The unique indium-diffusion behavior in the SIMOX is believed to be a composite effect of indium trapping by the two Si-BOX interfaces, indium atoms being drawn away from the top silicon layer by the buried oxide, as well as implant damages in the top silicon. The asymmetrical structure of the BOX layer with Si islands accumulating at the bottom BOX-Si interface and the abundance of oxygen-related defects in the BOX layer are also believed to be responsible for the indium-diffusion behavior in the BOX layer.

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“…The SOI R&D is pioneered and undertaken by Professor Lin Chenglu and coworkers including Professor Zhang Miao and Liu Weili at Shanghai Institute of Microsystem and information Technology, Chinese Academic of Sciences (SIMIT, CAS) [2,3] .…”

Section: Introductionmentioning

confidence: 99%

Overview of SOI technologies in China

Chen¹,

Wang²

2009

2009 IEEE International SOI Conference

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Since the early 1980s, SOI technologies have been developed in China, where SIMOX, BESOI and SIMBOND are three main SOI materials technologies commercialized so far. In order to cut down the production cost, one has been trying to improve SIMOX technology by optimizing dose energy match to obtain high quality low-dose SIMOX wafer. By the end of 2005, BESOI SOI pilot line has been established and a new technology named SIMBOND technology has come to birth. Some innovative structures, like SiGe on insulator (SGOI) material, Strain Silicon on insulator (SSOI), AlN buried layer have also been investigated. Some commercial IC manufacturers start to design and produce SOI-based devices since 2002, when Shanghai Simgui Technology Co.,Ltd., was able to produced 100 mm, 125 mm and 150 mm SIMOX wafers and sold them to the semiconductor industry worldwide. This paper presents an outlook, the recent status and future prospect of SOI technologies in China.

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Study of Cu gettering to cavities in separation by implantation of oxygen substrates

Cited by 12 publications

References 11 publications

Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen

Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen

Overview of SOI technologies in China

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