Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO&lt;inf&gt;2&lt;/inf&gt; and SiN&lt;inf&gt;x&lt;/inf&gt;

Kakegami, T.; Ohi, S.; Sengendo, K. P.; Tokuda, Hirokuni; Kuzuhara, Masaaki

doi:10.1109/imfedk.2014.6867061

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2014

DOI: 10.1109/imfedk.2014.6867061

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Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO<inf>2</inf> and SiN<inf>x</inf>

T. Kakegami

S. Ohi

K. P. Sengendo

et al.

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Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO<inf>2</inf> and SiN<inf>x</inf>

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