Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

Wang, Chundong; Teng, Bin; Kwok, So-Ying; Lu, Zhenzhen; Yuen, Muk-Fung

doi:10.1088/0253-6102/56/6/15

Cited by 3 publications

(4 citation statements)

References 33 publications

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“…As is well known, temperature changes will lead to phase transition from ferroelectric (orderly state) to paraelectric (disorderly state), which has been widely observed in 2-D phase diagrams. [10][11][12][13][14][15] However, there are few 3-D phase diagrams showing the vivid phase transition of ferroelectrics up to now. Figure 2 exhibits the whole dynamic processes of the phase transition under the influence of temperature in three dimensions.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

“…The phase transition behaviors from ferroelectric to paraelectric have been widely demonstrated in the previous works. [12][13][14][15][16] However, the 3-D phase transition behaviors under high temperature have seldom been reported. Figure 4(a) exhibits the paraelectric phase showing random distribution in 3-D curves (Ω s /J vs. Ω b /J; Fig.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

“…It is well acknowledged that the transverse Ising model (TIM) developed by Gennes et al [9] (i.e., a pseudo-spin model of hydrogen-bonded ferroelectrics) should be more suitable to study the phase transition properties of the order-disorder type ferroelectric systems. Within the framework of meanfield approximation (MAF) under TIM, our group studied the inserting-layer effect, defect-layer effect, and seeding-layer effect in ferroelectric thin films, unveiling the phase transition features of the epitaxial ferroelectric films, [10][11][12][13][14][15][16][17] and presenting the spin-polarization of the ferroelectric supperlattice and crossover properties of the interaction parameters of the ferroelectric thin films. Using revised Fermi-type Green's function, Teng et al [18] revealed the transition regions in the parameter space of ferroelectric thin film with four-spin interactions.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dynamic phase transition of ferroelectric nanotube described by a spin-1/2 transverse Ising model*

Wang¹,

Wu²,

Cao³

et al. 2021

Chinese Phys. B

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The dynamic phase transition properties for ferroelectric nanotube under a spin-1/2 transverse Ising model are studied under the effective field theory (EFT) with correlations. The temperature effects on the pseudo-spin systems are unveiled in three-dimensional (3-D) and two-dimensional (2-D) phase diagrams. Moreover, the dynamic behaviors of exchange interactions on the 3-D and 2-D phase transitions under high temperature are exhibited. The results present that it is hard to obtain pure ferroelectric phase under high temperature; that is, the vibration of orderly pseudo-spins cannot be eliminated completely.

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Section: Numerical Results and Discussionmentioning

confidence: 99%

Section: Numerical Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dynamic phase transition of ferroelectric nanotube described by a spin-1/2 transverse Ising model*

Wang¹,

Wu²,

Cao³

et al. 2021

Chinese Phys. B

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show abstract

“…Additionally, solving the motion equation of the Green's function [20] in quantum statistical physics is a useful method for studying the ferroelectric or ferromagnetic phase transition properties of lowspin materials from low to high temperature ranges. Such an approach has been well-verified in ferroelectric thin films and superlattices [21][22][23], and can also be employed for qualitative analysis of phase transition properties in nanoislands.…”

Section: Introductionmentioning

confidence: 94%

Ferroelectric phase transitions of nanoislands based on transverse ising model

Chen,

Mo,

2023

Phys. Scr.

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Based on the transverse field Ising model, the phase transition properties of nanoislands with a spin-1/2 are studied by using the usual decoupling approximation of Fermi-type Green’s function. The phase diagram indicates that the phase transition curve (J S /J = t c , Ω S /J ∼ t c ) is highly sensitive to the interlayer exchange interaction (J R /J) and the ratio of surface to center transverse fields (Ω S /Ω). The polarization diagram reveals that the polarization curve exhibits steps attributed to spin inversion, and the temperature of the step point corresponds to the temperature at which spin configuration changes.

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Effects of the randomly distributed magnetic field on the phase diagrams of the transverse Ising thin film

Akıncı

2013

Journal of Magnetism and Magnetic Materials

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The effect of the zero centered Gaussian random magnetic field distribution on the phase diagrams and ground state magnetizations of the transverse Ising thin film has been investigated. As a formulation, the differential operator technique and decoupling approximation within the effective field theory has been used. The variation of the phase diagrams with the Gaussian distribution width (σ) has been obtained and particular attention has been paid on the evolution of the special point coordinate with distribution parameter. In addition, the ground state longitudinal and transverse magnetization behaviors have been investigated in detail. IntroductionRecently there has been growing interest both theoretically and experimentally on the finite magnetic materials especially on semi-infinite systems and thin films, since the magnetic properties of free surfaces are drastically different from the bulk material, because the free surface breaks the translational symmetry, i.e. surface atoms are embedded in an environment of lower symmetry than that of the inner atoms [1,2]. If the surface exchange coupling is greater than a critical value, the surface region can exhibit an ordered phase even if the bulk is paramagnetic and it has a transition temperature higher than the bulk one. This fact has been observed experimentally [3,4,5].Also, the development of the molecular beam epitaxy technique and its application to the growth of thin metallic films has stimulated renewed interest in thin film magnetism. It was experimentally found that, the Curie temperature and the average magnetic moment per atom increases with the increasing thickness of the film [6,7]. Thin films can be modeled by Ising model due to the fact that, many ultrathin films do indeed exhibit a strong uniaxial anisotropy [8]. These systems have been widely studied in literature by means of several theoretical methods such as Monte Carlo (MC) simulations [9,10,11,12,13,14], mean field approximation (MFA) [15,16] and effective field theory (EFT) [17,18].But the study of ferroelectric films treated by transverse Ising model (TIM) are more common in the literature. Oxide thin films with perovskite-type structure (such as Barium titanate BaT iO 3 and Strontium titanate SrT iO 3 ) have been fabricated [19,20,21] and novel physical properties found in these ferroelectric thin films which have many application areas in technology [22], such as 1 umit.akinci@deu.edu.tr 1

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Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

Cited by 3 publications

References 33 publications

Dynamic phase transition of ferroelectric nanotube described by a spin-1/2 transverse Ising model*

Dynamic phase transition of ferroelectric nanotube described by a spin-1/2 transverse Ising model*

Ferroelectric phase transitions of nanoislands based on transverse ising model

Effects of the randomly distributed magnetic field on the phase diagrams of the transverse Ising thin film

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