Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Askerov, Sh. G.; Abdullayeva, L. K.; Hasanov, M. G.

doi:10.1088/1674-4926/41/10/102101

Cited by 2 publications

(7 citation statements)

References 12 publications

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“…In this case, the lower interface may be diverse for Ni(SiGe)/Si systems processed at various temperatures. Such a thermal budget-related M/S morphology shows a specific interfacial bonding intensity, and intensively affects the electron tunneling process [39,40]. That is, the alloying condition (result) also plays a critical role in the on-state current promotion.…”

Section: Resultsmentioning

confidence: 99%

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Zhang¹,

Yuan²,

Zhao³

et al. 2022

J. Phys. D: Appl. Phys.

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Thermal budget is always a vital element in Si-based superlattice materials processing. In this work, a novel n-type ohmic contacting scheme with a low processing thermal budget is developed by combining the high-dose ion implantation and low-temperature alloying techniques. The optimized specific contact resistivity (ρc) is reduced to 6.18×10-3 Ω·cm² at a low thermal budget of 400 °C, and this is a result of the efficient low-temperature electrical activation in amorphous substances. It is indicated that both the high doping concentration and the formation of NiSi(Ge) alloy phase contribute to the linear ohmic contacting behavior. The ohmic contact resistance dependency on processing temperature is further revealed by a detailed Ni/Si(Ge)-alloying model. A minimum ρc of 2.51×10−4 Ω·cm² is achieved at a thermal budget of 450 °C, which is related to the high bonding intensity at metal/semiconductor interface. Note that this technique is compatible with standard Si-based CMOS process flow, and meanwhile can be applied in high-performance insulated-gate field-effect transistor (IGFET) fabrication. Furthermore, it is verified in our IGFETs that Si/Ge superlattice structures can serve as an efficient potential barrier to constrain electrons.

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Section: Resultsmentioning

confidence: 99%

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Zhang¹,

Yuan²,

Zhao³

et al. 2022

J. Phys. D: Appl. Phys.

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“…On the other hand, there are deformed hexagonal voids in this direction of silicon. This, in turn, can affect the parameters of the metalsemiconductor contact-based device (for example, the presence of load-carrying mechanisms) (Sze, 1980;Askerov, 2017;Afandiyeva et al, 2018).…”

Section: Methodsmentioning

confidence: 99%

“…In the case of a two-diode contact, according to (Askerov et al, 2020) the height of the barrier is expressed by the formula:…”

Section: Experimental Partmentioning

confidence: 99%

“…The polycrystalline nature of the metal contact makes the contact boundary of the MSC non-uniform on the metal side. Such heterogeneity is due to various surface defects: dislocations and oxide layers of different thicknesses (Askerov, 2017;Hudait & Krupanidhi, 2001).…”

Section: Introductionmentioning

confidence: 99%

“…This is due to the fact that it is technologically difficult to obtain a monocrystalline layer that creates a homogeneous touch boundary. When the metal layer has a polycrystalline structure, the touch boundary cannot be homogeneous (Sze, 1980;Askerov, 2017).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

INVESTIGATION OF THE ROLE OF METAL IN NON-ALLOY METAL-SEMICONDUCTOR (Si) CONTACT

Abdullayeva

2024

NMCA

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In the paper is shown that the metal is a more active partner in Schottky diodes (SD) based on metal-semiconductor contact (MSC) from the series of semiconductor devices. It is shown the structural inhomogeneity of the interface, as a result of which the MSC as a parallel connection of numerous subdiodes having different parameters. To reveal the inhomogeneity of the metal on the properties of the MSC, the dependence of the barrier height of Schottky diodes on the contact area was investigated. It was assumed that in the case of a contact of a single-crystal semiconductor with a polycrystalline metal, the degree of inhomogeneity and accordingly, the number of subcontacts grow with increasing area.

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Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Cited by 2 publications

References 12 publications

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

INVESTIGATION OF THE ROLE OF METAL IN NON-ALLOY METAL-SEMICONDUCTOR (Si) CONTACT

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