Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Naik, Harsh; Chow, T. Paul

doi:10.4028/www.scientific.net/msf.679-680.595

Cited by 22 publications

(28 citation statements)

References 9 publications

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“…As the value of μ FE is affected by carrier trapping at the MOS interface, the Hall effect mobility in the inversion layer (μ Hall ) has been extensively studied using Hall effect measurements. [5][6][7][8][9][10][11][12][13][14][15] This is because μ Hall can be evaluated, irrespective of the carrier trapping at the MOS interface, in contrast to μ FE . Hall effect measurements enable the simultaneous evaluation of the surface carrier density (N S ) and μ Hall of MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface

Noguchi

Iwamatsu

Amishiro

et al. 2020

Jpn. J. Appl. Phys.

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The Coulomb-limited mobility (μ Coulomb ) of Si-face 4H-SiC MOSFETs with nitrided gate oxide is experimentally evaluated. μ Coulomb is experimentally determined using samples with various acceptor concentrations by varying the body bias. It is found that the depletion-charge and surface-carrier densities in the inversion layer can be utilized to well formulate μ Coulomb . In addition, μ Coulomb is investigated as a function of the inversion-carrier average distance from the MOS interface (Z AV ), and it is established that Z AV can universally describe μ Coulomb in the inversion layer of Si-face 4H-SiC MOSFETs with nitrided gate oxide.

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Section: Introductionmentioning

confidence: 99%

Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface

Noguchi

Iwamatsu

Amishiro

et al. 2020

Jpn. J. Appl. Phys.

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“…28 Recently, we have observed that Al-implanted lateral MOSFETs processed without a protection during postimplantation annealing show a higher channel mobility 0021-8979/2012/112(8)/084501/6/$30.00 V C 2012 American Institute of Physics 112, 084501-1 (40 cm 2 V À1 s À1 ) with respect to devices fabricated using a protecting carbon capping layer (24 cm 2 V À1 s À1 ). 29 Although Coulomb scattering was recently indicated as the dominant factor which limits the channel mobility in 4H-SiC, 29,30 the impact of the morphological surface conditions on MOSFETs performances remained unclear.…”

Section: Introductionmentioning

confidence: 99%

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Fiorenza

Giannazzo

Frazzetto

et al. 2012

Journal of Applied Physics

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The influence of the surface morphology on the channel mobility of 4H-SiC metal-oxide-semiconductor field effect transistors annealed under two different conditions is discussed. The devices were fabricated using post-implantation annealing at 1650 °C. In particular, while the use of a protective capping layer during post-implantation annealing preserved a smooth 4H-SiC surface resulting in a channel mobility of 24 cm2 V−1 s−1, a rougher morphology of the channel region (with the presence of surface macrosteps) was observed in the devices annealed without protection, which in turn exhibited a higher mobility (40 cm2 V−1 s−1). An electrical analysis of SiO2/SiC capacitors demonstrated a reduction of the interface state density from 7.2 × 1011 to 3.6 × 1011 cm−2 eV−1, which is consistent with the observed increase of the mobility. However, high resolution transmission electron microscopy showed an almost atomically perfect SiO2/4H-SiC interface. The electrical results were discussed considering the peculiar surface morphology of the annealed 4H-SiC surfaces, i.e., attributing the overall reduction of the interface state density to the appearance of macrosteps exposing non-basal planes.

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“…27) The optical phonon scattering has been taken into account for the bulk mobility of SiC, and reported to have great impact on the total mobility. 28) Therefore, instead of acoustic phonon scattering mobility in conventional mobility models, [29][30][31][32][33] μ OP was applied to the improved mobility model with Coulomb scattering mobility (μ C ) 32) and surface roughness scattering mobility (μ SR ) 32) as follows:…”

Section: Experimental Methodsmentioning

confidence: 99%

Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs

Kutsuki

Murakami

Watanabe

et al. 2018

Jpn. J. Appl. Phys.

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The effects of the surface roughness of trench sidewalls on electrical properties have been investigated in 4H-SiC trench MOSFETs. The surface roughness of trench sidewalls was well controlled and evaluated by atomic force microscopy. The effective channel mobility at each measurement temperature was analyzed on the basis of the mobility model including optical phonon scattering. The results revealed that surface roughness scattering had a small contribution to channel mobility, and at the arithmetic average roughness in the range of 0.4-1.4 nm, there was no correlation between the experimental surface roughness and the surface roughness scattering mobility. On the other hand, the characteristics of the gate leakage current and constant current stress time-dependent dielectric breakdown tests demonstrated that surface morphology had great impact on the long-term reliability of gate oxides.

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Study of Mobility Limiting Mechanisms in (0001) 4H and 6H-SiC MOSFETs

Cited by 22 publications

References 9 publications

Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface

Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs

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