Study of Short-Range Ordering in SnTe?In? Semiconductor Solid Solutions by119Sn M�ssbauer Spectroscopy

Abstract

The dependences of the isomer shift d and the resonant absorption peak area S on the Te content (49.9-51.4 at%) in the SnTehIni semiconductor alloys at the fixed indium concentration (3 at%) were investigated at 300 K using the Mö ssbauer spectroscopy. Maxima of S and inflection points in the d curves were detected at the Te concentrations corresponding to the condition C In /C v ¼ 2, where C In and C v are the atomic concentrations of In and non-stoichiometric vacancies, respectively. The observed non-monotonous character of the d and S dependences on the degree of deviation from stoichiometry was attributed to the processes of recharging In impurity atoms (In 1+ ! In 3+ ) by introducing non-stoichiometric vacancies and formation of molecular complexes as a result of interactions between intrinsic defects and impurity atoms.

Mechanism of “Controlled Atomic Defects”: Extension to the Ternary Systems

“…19,[47][48][49][50][51] The influence of non-stoichiometric vacancies on charge states of impurity atoms with variable vacancy was detected. [47][48][49] The result of such influence is partial neutralization of the cation vacancies charge and qualitative change in the behavior of the dependences of properties on the degree of deviation from stoichiometry. In Figs.…”