Study of some numerical characteristic parameters of Sb2S3-As2S3-Sb2Te3 vitreous compositions calculated from their chemical formula obtained by EDS experiments

Dally, B. M.; Kouame, N.; Houphouët-Boigny, D.

doi:10.15251/cl.2021.1811.681

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2023

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Cited by 3 publications

References 8 publications

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Micro-Raman Analysis of Some As-S-S-Te Nanostructured Semiconductors

Iaseniuc,

Iovu

2023

IFMBE Proceedings

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Micro-Raman Analysis of Some As-S-S-Te Nanostructured Semiconductors

Iaseniuc,

Iovu

2023

IFMBE Proceedings

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Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors

Iaseniuc¹,

Iovu²,

Rosoiu³

et al. 2022

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The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.

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Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films

Iaseniuc,

Iovu

2023

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In the present work some nanostructured quaternary chalcogenides of the As-S-Sb-Te system have been investigated by a photoelectric method. The spectral distribution of steadystate photocurrent Iph=(λ) and the relaxation curves of photocurrent Iph=(t) were registered at positive and negative polarity of the applied voltage to the top Al illuminated electrode. In the spectral distribution of steady-state photocurrent, for the amorphous thin films As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 in the wavelength range λ=0.50÷0.92 mm (2.48÷1.35 eV) some maxima were detected, which are the result of the presence of binary clusters As2S3, Sb2S3 and Sb2S3. The photovoltaic method was used to obtain the value of the band gap width, which was about Eg =1.41 eV.

show abstract

Study of some numerical characteristic parameters of Sb2S3-As2S3-Sb2Te3 vitreous compositions calculated from their chemical formula obtained by EDS experiments

Cited by 3 publications

References 8 publications

Micro-Raman Analysis of Some As-S-S-Te Nanostructured Semiconductors

Micro-Raman Analysis of Some As-S-S-Te Nanostructured Semiconductors

Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors

Steady-state and transient photocurrents of As-S-Sb-Te amorphous thin films

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