Study of temperature reliability for a parallel high-efficiency class-E power amplifier

Abstract

Purpose The purpose of this paper is to investigate the temperature reliability for a parallel high-efficiency class-E power amplifier (PA). Design/methodology/approach To explore the relationship between temperature and direct current (DC) characteristics, output power, S parameters and efficiency of the PA quantitatively, a series of reliability experiments have been designed and conducted to study the temperature reliability for this PA. Findings From the results, the prominent performance degradation even failure is found during the testing. Furthermore, the thermal shock test can cause permanent failure, which is a great threat for PA. Research limitations/implications Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the stage of PA design. Practical implications All these can provide important guidance for the reliability design of PA. Social implications All these can give some important guidance for PA application. Originality/value In addition, PA is usually designed according to the electrical properties at the room temperature. From the results above, it can be concluded that it may be unable to satisfy the performance requirement at high temperature. In turn, if it is designed according to the electrical properties at low temperature, the transistor often works in the super-saturated state, the reliability of PA will become the new problem. Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the design.

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

“…According to previous papers, investigation on temperature behavior is still a hot issue [ 9 , 10 ]. However, the common temperature ranges, depending on the extreme temperature, are −40–120 °C, −25–125 °C, 10–90 °C, 20–120 °C or 25–125 °C and so on [ 8 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. Meanwhile, the equal interval temperatures are adopted [ 8 , 15 , 16 , 17 , 18 , 19 ].…”

“…However, the common temperature ranges, depending on the extreme temperature, are −40–120 °C, −25–125 °C, 10–90 °C, 20–120 °C or 25–125 °C and so on [ 8 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. Meanwhile, the equal interval temperatures are adopted [ 8 , 15 , 16 , 17 , 18 , 19 ]. Notably, it is not appropriate to use similar methods to determine the temperature of investigation under alpine conditions.…”

Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test

“…When the temperature changes, so does the PA's performance, which in severe cases, may cause the system to fail to perform its intended function [6]. According to the literature, 31% of electronic equipment failures at U.S. coastal bases are caused by high temperatures and humidity [7][8][9]. Likewise, a change in the specification of a PA will cause the system in which it is located to fail [10].…”

An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

“…The relationship between PA performance and temperature has been a hot topic of research. Previous research has focused on PA performance at specific typical temperature points such as 23 • C [8], 25 • C [7], 125 • C [9], etc., or PA performance in a specific temperature range such as −20 to 120 • C [10], −40 to 125 • C [11], 10 to 100 • C [4], etc. However, there is limited experimental analysis data in the literature reporting on the performance of PA concerning sharp temperature changes since the PA may work not only in low or high-temperature environments but also in environments with rapid temperature changes such as deserts, coastal areas, Mars (Tianwen-1 and Curiosity Mars Rovers), etc.…”