Study of Terahertz Sensing Performance Based on Graphene-DBR Asymmetric Structure

Abstract

Tamm plasmon polaritons have super strong field localization, and can be directly excited by TM or TE polarized light without dispersive devices, whose related technology has become one of the research hotspots nowadays. In view of this, in this paper, a terahertz sensor device based on double-dip detection of Tamm plasmon polaritons is designed. The device is asymmetric structure, which can excite two Tamm plasmon polaritons modes with the different intrinsic energies at the interface between two DBRs and graphene. Through the optimized simulation analysis of its terahertz sensing characteristics, the results show that the reflection spectrum under this structure has two dips at 0.9THz and 1.0THz respectively, and their full widths at half maxima of 0.0361THz and 0.0131THz are relatively narrow. Moreover, their sensitivities are 0.21THz/RIU and 0.41THz/RIU, and the figure of merit can reach up to 5.69RIU−1 and 31.33RIU−1, respectively. Therefore, this research is suitable for high sensitivity terahertz double-dip detection, and has important application prospect in terahertz devices.