Study of the Electrons Density in the Base of the Parallel Vertical Junction Solar Cell Under the Influence of the Temperature

Abstract

This work is a theoretical study of a parallel vertical junction solar cell under multispectral illumination in static regime. The expression for the density of the minority carriers in excess (electrons) in the base is determined from the equation of continuity. It's an equation that takes into account the process of generation of the charge carriers, the process of diffusion of these carriers and their processes of recombination process. The aim of this work is to study the evolution of this density depending on temperature and its distribution in depth following x and the thickness z in the base for different values of the temperature.

Study of the Photothermal Response of a Junction Vertical Parallel Silicon Solar Cell under a Multispectral Illumination

“…The objective of this paper is to extend the previously developed theory [5][6][7][8][9]. To study the effects of angular frequency (), incidence angle (θ), depth (z), junction recombination velocity (Sf); and the wavelength (λ) on the photovoltaic parameters of preferentially doped polysilicon solar cells.…”