Study of the sensitivity of neutron sensors consisting of a converter plus Si charged-particle detector

Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

“…The research and development effort in this area has been mainly focused to develop substitutes for conventional detectors such as 3 He or BF 3 detectors, with improvements in terms of device design and fabrication technology, cost, size, operating voltage/power and adaptability to different applications. Such solid state detectors have been realized by using a suitable converter layer along with a semiconductor detector [1][2][3][4][5][6] or by forming a converter layer as an integral part of the semiconductor device [7,8]. In the former case, the charged particle due to interaction of neutrons with the converter layer is detected by the semiconductor detector, while in the latter case, the charged particle is released by the interaction of neutrons in the device itself and is subsequently detected.…”

“…In the former case, the charged particle due to interaction of neutrons with the converter layer is detected by the semiconductor detector, while in the latter case, the charged particle is released by the interaction of neutrons in the device itself and is subsequently detected. Several semiconductor materials such as Si, GaAs, SiC and diamond have been studied for solid state neutron detectors [1][2][3][4][5][6]. Heterojunction semiconductor devices with semiconducting form of boron carbide have been also demonstrated as neutron detectors [9].…”

Influence of construction and technology on the time stability of the neutron sensors

“…This phenomenon is completely reversible -the diode, when power is turned off, after a period of time -depending on the extent of depravity returns to baseline parameters. In sensor HZ1/50-Cd, where used as a converter 6 LiF, notice no changes to the dark current with long-term electric load.…”

“…Figure 1 shows the principle of structure construction HZ1/50 detectors. Inside sensors HZ1/50-Cd as a converter for thermal and epithermal neutrons (with an energy of 0.025 eV to 10 keV), applied a thin layer of 6 LiF applied to the surface of the active diode p + -ν-n + . Inside sensors for fast neutrons HZ1/50-Pb (1 MeV energies up to 20 MeV) was used synthetic wax filler cover.…”

“…To ensure the selective detection, in the sensors of thermal neutrons and epithermal used the cover of cadmium from the orifice, in the fast neutron sensors -lead casing. [2,3,4,5,6] Figure 2 shows a schematic diagram of the sensors HZ1/50. …”