Study of the Structural, Electronic, Magnetic, and Optical Properties of Mn2ZrGa Full-Heusler Alloy: First-Principles Calculations

Emami, Seyyed Amir Abbas; Amirabadizadeh, Ahmad; Nourbakhsh, Zahra; Baizaee, S.M.; Sadr, Seyyed Mojtaba Alavi

doi:10.1007/s10948-017-4174-6

Cited by 9 publications

(1 citation statement)

References 25 publications

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“…Electronic structure calculations performed on manganese-based Heusler alloys have shown that many of them can exhibit HMF properties. These are Mn 2 VZ (Z = Al, Ga, In, Si, Ge, Sn) compounds [35], Mn 2 FeZ (Z = Al, Ga, Si, Ge, Sb) [36], Mn 2 CrZ (Z = Al, Ga, Si, Ge, Sb) [37], Mn 2 TiZ (Z = Al, As, Bi, Ga, Ge, Sb, Si, Sn) [38], Mn 2 ZrZ (Z = Ga, Ge, Si) [39,40]. It is worth emphasizing that the HMF state predicted theoretically and/or as a result of band calculations is by no means always realized in real compounds.…”

Section: Electronic and Magneticmentioning

confidence: 99%

Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn2YAl and Mn3Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)

Marchenkov,

Irkhin

2023

Materials

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We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn2YZ and Mn3Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn2YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds of Mn3Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn2YAl and Mn3Z compounds can be used for applications in micro- and nanoelectronics and spintronics.

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