Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

Rani, Sunita; Mohan, Devendra; Kumar, Manish; Sanjay,

doi:10.1016/j.optmat.2018.03.046

Cited by 3 publications

(1 citation statement)

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“…The A Ga M ′ Q 4 materials have a higher THG response than K 4 GeP 4 Se 12 or Li 2 CdGeS 4 and are on par or slightly below the one-dimensional compounds K (1–x) Cs x PSe 6 and CsPSe 6 but lack their SHG properties. These crystalline bulk materials, however, are outclassed by chalcogenide-based glasses and thin films. − …”

Section: Resultsmentioning

confidence: 99%

Layered and Cubic Semiconductors AGaM′Q₄ (A⁺ = K⁺, Rb⁺, Cs⁺, Tl⁺; M′⁴⁺ = Ge⁴⁺, Sn⁴⁺; Q^2– = S^2–, Se^2–) and High Third-Harmonic Generation

et al. 2020

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Eighteen new quaternary chalcogenides AGaM′Q 4 (A + = K+, Rb+, Cs+, Tl+; M′4+ = Ge4+, Sn4+; Q 2– = S2–, Se2–) have been prepared by solid-state syntheses and structurally characterized using single-crystal X-ray diffraction techniques. These new phases crystallize in a variety of layered structure types. The tin analogues also adopt an extended three-dimensional network structure as polymorphs. The polymorphism and phase-stability in these cases were studied by thermal analysis and high-temperature in situ X-ray powder diffraction. All compounds are semiconductors with the colored selenides absorbing light in the infrared-green region (1.8 eV < E g < 2.3 eV) and the mostly white sulfides absorbing light in the blue-ultraviolet range (2.5 eV < E g < 3.6 eV). Based on third-harmonic generation (THG) measurements, the third-order nonlinear optical (NLO) susceptibilities χ(3) of the new and previously reported AGaM′Q 4 compounds were determined. These measurements revealed an apparent correlation between the THG response of the sample and its band gap, rather than the crystal structure type. While low-gap materials possess higher nonlinearity in general, we found that layered orthorhombic RbGaGeS4 exhibits an impressive χ(3) value (about four times larger than that of AgGaS2) even with a large band gap and shows stability under ambient conditions with no significant irradiation damage.

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Section: Resultsmentioning

confidence: 99%

Layered and Cubic Semiconductors AGaM′Q₄ (A⁺ = K⁺, Rb⁺, Cs⁺, Tl⁺; M′⁴⁺ = Ge⁴⁺, Sn⁴⁺; Q^2– = S^2–, Se^2–) and High Third-Harmonic Generation

et al. 2020

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Nonlinear Optical Properties of 2D Materials and their Applications

Xie,

Zhao,

et al. 2024

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Abstract2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light‐matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second‐order and third‐order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second‐order susceptibility χ(2) and third‐order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second‐harmonic generation (SHG) and third‐harmonic generation (THG) for 2D materials are presented.

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A review on the linear/nonlinear optical properties of Se doped chalcogenide thin films as potential optoelectronic applications

Sahoo¹,

Naik²

2022

Journal of Non-Crystalline Solids

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Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

Cited by 3 publications

References 16 publications

Layered and Cubic Semiconductors AGaM′Q₄ (A⁺ = K⁺, Rb⁺, Cs⁺, Tl⁺; M′⁴⁺ = Ge⁴⁺, Sn⁴⁺; Q^2– = S^2–, Se^2–) and High Third-Harmonic Generation

Layered and Cubic Semiconductors AGaM′Q₄ (A⁺ = K⁺, Rb⁺, Cs⁺, Tl⁺; M′⁴⁺ = Ge⁴⁺, Sn⁴⁺; Q^2– = S^2–, Se^2–) and High Third-Harmonic Generation

Nonlinear Optical Properties of 2D Materials and their Applications

A review on the linear/nonlinear optical properties of Se doped chalcogenide thin films as potential optoelectronic applications

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Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

Cited by 3 publications

References 16 publications

Layered and Cubic Semiconductors AGaM′Q4 (A+ = K+, Rb+, Cs+, Tl+; M′4+ = Ge4+, Sn4+; Q2– = S2–, Se2–) and High Third-Harmonic Generation

Layered and Cubic Semiconductors AGaM′Q4 (A+ = K+, Rb+, Cs+, Tl+; M′4+ = Ge4+, Sn4+; Q2– = S2–, Se2–) and High Third-Harmonic Generation

Nonlinear Optical Properties of 2D Materials and their Applications

A review on the linear/nonlinear optical properties of Se doped chalcogenide thin films as potential optoelectronic applications

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Product

Resources

About

Layered and Cubic Semiconductors AGaM′Q₄ (A⁺ = K⁺, Rb⁺, Cs⁺, Tl⁺; M′⁴⁺ = Ge⁴⁺, Sn⁴⁺; Q^2– = S^2–, Se^2–) and High Third-Harmonic Generation

Layered and Cubic Semiconductors AGaM′Q₄ (A⁺ = K⁺, Rb⁺, Cs⁺, Tl⁺; M′⁴⁺ = Ge⁴⁺, Sn⁴⁺; Q^2– = S^2–, Se^2–) and High Third-Harmonic Generation