Study on the electrical, optical, structural, and morphological properties of highly transparent and conductive AZO thin films prepared near room temperature

Wen, Long; Sahu, Bibhuti Bhusan; Kim, Hye R.; Han, Jeon G.

doi:10.1016/j.apsusc.2018.11.250

Cited by 46 publications

(23 citation statements)

References 36 publications

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“…Transparent conductive oxides (TCOs) combine good conductivity and ideal transmittance and can be used in various domains [1][2][3]. However, most commercially used TCOs are n-type conductivity in which the majority carriers are electrons [4].…”

Section: Introductionmentioning

confidence: 99%

The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

et al. 2020

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CuCrO2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film’s optoelectronic properties was investigated. As the film’s composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu+/Cu2+ led to an enhancement of the hybridization between the Cu3d and O2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr0.95−xMg0.05]O2, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film’s transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film’s composition is Cu[Cr0.78Mg0.05]O2. Its Haacke’s figure of merit is about 1.23 × 10−7 Ω−1.

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Section: Introductionmentioning

confidence: 99%

The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

et al. 2020

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“…For example, cost effective solar cells based on Cu (In,Ga)Se 2 (CIGS) and Cu 2 ZnSnS 4 (CZTS) absorbers have been fabricated with a TCO based on AZO [6,7]. There are several methods used to deposit AZO, including physical vapor deposition (under various operation conditions for magnetron sputtering, such as radio-frequency [8][9][10][11][12][13][14][15][16][17][18][19][20], medium-frequency [8,[21][22][23][24][25][26], DC [8,16,22,[26][27][28][29][30][31][32][33][34][35][36][37], pulsed DC [38], high power impulse [39,40], ion beam assisted [41], chemical vapor deposition [1,5] and other chemical methods such as spin coating and sol gel [2,4]. Among them, magnetron plasma sputtering has been successfully used to deposit ITO on large area substrates (up to 15 m 2 ) and is also regarded as a viable and cost effective solution for AZO …”

Section: Introductionmentioning

confidence: 99%

Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating

Stamate

2019

Nanomaterials

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Transparent and conducting thin films were deposited on soda lime glass by RF magnetron sputtering without intentional substrate heating using an aluminum doped zinc oxide target of 2 inch in diameter. The sheet resistance, film thickness, resistivity, averaged transmittance and energy band gaps were measured with 2 mm spatial resolution for different target-to-substrate distances, discharge pressures and powers. Hall mobility, carrier concentration, SEM and XRD were performed with a 3 mm spatial resolution. The results reveal a very narrow range of parameters that can lead to reasonable resistivity values while the transmittance is much less sensitive and less correlated with the already well-documented negative effects caused by a higher concentration of oxygen negative ions and atomic oxygen at the erosion tracks. A possible route to improve the thin film properties requires the need to reduce the oxygen negative ion energy and investigate the growth mechanism in correlation with spatial distribution of thin film properties and plasma parameters.

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“…Currently, magnetron sputtering and the sol-gel method are most commonly used to prepare ZnO-based thin films [ 16 , 17 , 18 ]. In particular, magnetron sputtering has attracted much attention due to its low deposition temperature, fast sputtering speed, uniform film formation, and good repeatability [ 19 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

In-Sn-Zn Oxide Nanocomposite Films with Enhanced Electrical Properties Deposited by High-Power Impulse Magnetron Sputtering

Sun

Chen

et al. 2021

Nanomaterials

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In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the duty cycle (pulse off-time) on the microstructures and electrical performance of the films was investigated. The results showed that ITZO thin films prepared by HiPIMS were dense and smooth compared to thin films prepared by direct-current magnetron sputtering (DCMS). With the pulse off-time increasing from 0 μs (DCMS) to 2000 μs, the films’ crystallinity enhanced. When the pulse off-time was longer than 1000 μs, In2O3 structure could be detected in the films. The films’ electrical resistivity reduced as the pulse off-time extended. Most notably, the optimal resistivity of as low as 4.07 × 10−3 Ω·cm could be achieved when the pulse off-time was 2000 μs. Its corresponding carrier mobility and carrier concentration were 12.88 cm2V−1s−1 and 1.25 × 1020 cm−3, respectively.

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Study on the electrical, optical, structural, and morphological properties of highly transparent and conductive AZO thin films prepared near room temperature

Cited by 46 publications

References 36 publications

The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr0.95−xMg0.05]O2 Films Deposited by Reactive Magnetron Sputtering

Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating

In-Sn-Zn Oxide Nanocomposite Films with Enhanced Electrical Properties Deposited by High-Power Impulse Magnetron Sputtering

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