Study on the single pulse ablation characteristics of SiC ceramics by infrared femtosecond laser

Abstract

SiC ceramics have excellent physical and chemical properties, and have been extensively researched and used in electronics, optics, semiconductor and other fields. However, due to its high strength, high hardness and other characteristics, the conventional processing of SiC ceramics faces a series of challenges. Laser processing has become an effective processing technology due to its unique advantages. In this paper, the single pulse ablation tests of SiC ceramic with different powers were performed by using infrared femtosecond laser. The single pulse ablation threshold of SiC ceramic was calculated by using equivalent diameter method and equivalent area method, and the influence of laser power on the depth of the ablation hole was discussed. The results show that when the repetition frequency is 25kHz and the wavelength is 1035nm, the laser ablation values calculated by the equivalent diameter method and the equivalent area method are 0.3454 J/cm2 and 0.3268 J/cm2, respectively. Within a certain laser power range or reaching a certain ablation hole depth, the ablation hole depth augments with the increment of laser power. Beyond a specified laser power range, the hole depth decreases with the increment of laser power due to the effect of plasma shielding and recasting layer.