Study the effect of Cu to S molar ratios and annealing process on physical properties of CuxS thin films synthesized by spray pyrolysis method

ArabHajji, Narges; Eshghi, Hosein

doi:10.1007/s10854-023-11173-4

J Mater Sci: Mater Electron

2023

DOI: 10.1007/s10854-023-11173-4

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Study the effect of Cu to S molar ratios and annealing process on physical properties of CuxS thin films synthesized by spray pyrolysis method

Narges ArabHajji,

Hosein Eshghi

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2024

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Cited by 2 publications

References 33 publications

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Aerosol-assisted chemical vapor deposited Cu2S structured films with photo activated NO2 sensing properties

Trabelsi,

Gràcia,

Alouani

et al. 2024

Ceramics International

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Aerosol-assisted chemical vapor deposited Cu2S structured films with photo activated NO2 sensing properties

Trabelsi,

Gràcia,

Alouani

et al. 2024

Ceramics International

View full text Add to dashboard Cite

Enhancement of carrier concentration in chemical bath deposited copper sulfide (Cu_xS) thin film by post-growth annealing treatment

Sabat,

Gartia,

Sahoo

et al. 2024

Eng. Res. Express

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Copper sulfide thin films (CuxS, 1 ≤ x ≤ 2), owing to their unique optical and electrical properties, have attracted enormous attention in recent research. As one of the chalcogenide semiconductors, CuxS is used in several applications such as chemical sensors, photo-absorbing layers, photovoltaics, and lithium-ion batteries. In this study, copper sulfide thin film (CuxS; where 1 ≤ x ≤ 2) has been deposited by the chemical bath deposition method (CBD) at 27 °C with the molar ratio for copper and sulfur as 1:5, respectively. The structural, compositional, morphological, optical, and electrical properties of as-deposited and annealed CuxS thin films are investigated. From XRD plots, the presence of a mixture of two co-existing polycrystalline phases is observed, i. e. covellite phase with CuS stoichiometry and digenite phase with Cu1.8S stoichiometry up to an annealing temperature of 200 °C. At higher annealing temperatures, i.e. at 300 °C and 400 °C, the phase of CuxS thin film gets completely converted to digenite phase with Cu1.8S stoichiometry and chalcocite phase with Cu2S stoichiometry respectively. There is an enhancement in the crystallinity of CuxS thin film with an increase in annealing temperature as confirmed by XRD and Raman results. The optical bandgap of CuxS thin film is found to be decreased from 2.81 eV to 1.66 eV with an increase in the annealing temperature. The CuxS thin films are found to be p-type in nature, and the film annealed at 400 °C possesses the highest carrier concentration as revealed from the Hall effect measurement. This study aims to investigate the improvement of electrical properties of CuxS thin film with the variation in annealing temperature for optoelectronic applications such as photodetector.

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Study the effect of Cu to S molar ratios and annealing process on physical properties of CuxS thin films synthesized by spray pyrolysis method

Cited by 2 publications

References 33 publications

Aerosol-assisted chemical vapor deposited Cu2S structured films with photo activated NO2 sensing properties

Aerosol-assisted chemical vapor deposited Cu2S structured films with photo activated NO2 sensing properties

Enhancement of carrier concentration in chemical bath deposited copper sulfide (Cu_xS) thin film by post-growth annealing treatment

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Study the effect of Cu to S molar ratios and annealing process on physical properties of CuxS thin films synthesized by spray pyrolysis method

Cited by 2 publications

References 33 publications

Aerosol-assisted chemical vapor deposited Cu2S structured films with photo activated NO2 sensing properties

Aerosol-assisted chemical vapor deposited Cu2S structured films with photo activated NO2 sensing properties

Enhancement of carrier concentration in chemical bath deposited copper sulfide (CuxS) thin film by post-growth annealing treatment

Contact Info

Product

Resources

About

Enhancement of carrier concentration in chemical bath deposited copper sulfide (Cu_xS) thin film by post-growth annealing treatment