Sub‐1100 nm lasing from post‐growth intermixed InAs/GaAs quantum‐dot lasers

Abstract

Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070-1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm −1), suitable for applications in frequency doubled greenyellow-orange laser realisation, gas sensing, metrology etc.

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

“…As we can see from spectral results discussed above, the intermixing effect is significant in determining the emission behaviors of the self-assembled InAs/GaAs QD system. Actually, it has been found that well-controlled QD intermixing allows tuning of their emission wavelength, making it an attractive tool for the manufacturing of multiple-section photonic integrated circuits. ,, However, a desirable large blue-shift of the emission wavelength is always accompanied by a dramatic decrease of PL intensity during the intermixing process. ,,− , In addition, the high-quality AlGaAs cladding layer usually is grown at much higher temperatures compared with that for the growth of the QD active medium, which can be equivalent to a relatively strong RTA treatment for the QD active region. Moreover, RTA can also be utilized to get rid of the point defects that are produced during the epitaxy growth.…”

“…Actually, it has been found that well-controlled QD intermixing allows tuning of their emission wavelength, making it an attractive tool for the manufacturing of multiple-section photonic integrated circuits. 22,61,62 However, a desirable large blue-shift of the emission wavelength is always accompanied by a dramatic decrease of PL intensity during the intermixing process. 23,26,[58][59][60]63 In addition, the high-quality AlGaAs cladding layer usually is grown at much higher temperatures compared with that for the growth of the QD active medium, which can be equivalent to a relatively strong RTA treatment for the QD active region.…”

“…In recent years, remarkable progress has been made to analyze and optimize the optical properties of InAs/GaAs QD structures by using p-doping and rapid thermal annealing (RTA) methods. − However, most of these studies were based on solo QD structures, whose properties deviate greatly from those in the final practical laser devices, ,− rather than QD laser structures. The practical InAs/GaAs QD laser structure is based on a typical p–i–n configuration, in which a thick p-AlGaAs top cladding layer is grown on the InAs QD active layers.…”

Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

“…Negligible wavelength shift was observed for devices capped with plasma-enhanced chemical vapor deposition (PECVD) -deposited HfO 2 and SiO 2 dielectric films. [11][12][13] In this work, thermally induced dielectric strain is employed on tensile-strained InGaP/InAlGaP laser structure to promote interdiffusion via application of a single (SiO 2 , Si 3 N 4 ) and bilayers (SiO 2 /Si 3 N 4 ) of dielectric films at elevated temperature. A bandgap blueshift as large as large as 250-300meV was observed for samples capped with a single layer of 1µm-SiO2 and 0.1µm-Si3N4 and annealed at an elevated temperature for cycles of annealing steps.…”