Sub-picosecond pulse generation by 40-GHz passively mode-locked quantum-dash 1-mm-long Fabry-Pérot laser diode

Latkowski, Sylwester; Maldonado-Basilio, Ramón; Landais, Pascal

doi:10.1364/oe.17.019166

Cited by 30 publications

(36 citation statements)

References 7 publications

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“…A value of 860 fs was reported in the 1 MHz to 20 MHz range and an optimized RF linewidth of 30 kHz was also achieved at 242 mA with an estimated reduction in the timing jitter to 280 fs. These performance parameters were further improved by Latkowski et al [299] who successfully measured 720 fs pulse width from a 39.8 GHz Qdash mode-locked laser by passing through a 450 m single mode dispersion compensated fiber. Furthermore, as depicted in Fig.…”

Section: Self-pulsationmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Self-pulsationmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…This was carried out on a selfpulsating 30.3 GHz InAs/InGaAsP/InP QD-MLL. In terms of the timing jitter, Latkowski et al [82] utilized a 450-m long single mode dispersion-compensated fiber and demonstrated 720-fs wide pulses via a 39.8 GHz QD-MLL. Moreover, independently of the biasing current, a beating linewidth of 10e25 kHz was obtained with a timing jitter that varied from 350 to 150 fs while the peak power varied from 40 to 140 mW [83,84], as shown in Fig.…”

Section: Inas/inp Qdash Mode-locked Lasersmentioning

confidence: 99%

InAs/InP quantum-dash lasers

Khan

Alkhazraji

et al. 2019

Nanoscale Semiconductor Lasers

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“…Oscilloscope traces are then analyzed to characterize the pulse shape. The result is shown in Fig.7(a) and it is clear that the pulse has a chirp profile that is not linear, mostly attributed to the material dispersion 28 . The pulse has FWHM of 3 ps with an asymmetric temporal shape which spans over 6.6ps at 6dB below the top of peak.…”

Section: Demonstration Of Chirp Compensationmentioning

confidence: 99%

Integrated InP based modelocked lasers and pulse shapers

Bente¹,

Tahvili²,

Moskalenko³

et al. 2013

SPIE Proceedings

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Integrated InP based modelocked lasers and pulse shapersBente, E.A.J.M.; Tahvili, M.S.; Moskalenko, V.; Latkowski, S.; Wale, M.J.; Javaloyes, J.; Landais, P.; Smit, M.K. Published in:Integrated Optics: Devices, Materials, and Technologies XVII, San Francisco, 2013 DOI: 10.1117 Published: 01/01/2013 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTIn this paper we present recent results obtained in the area of monolithically integrated modelocked semiconductor laser systems using generic InP based integration platform technology operating around 1550nm. Standardized components defined in this technology platform can be used to design and realize short pulse lasers and optical pulse shapers. This makes that these devices can be realized on wafers that can contain many other devices. In the area of short pulse lasers we report design studies based on measured optical amplifier performance data. This work has the ultimate goal to establish a library of widely applicable short pulse laser designs. Such lasers can include components for e.g. wavelength control. An important boundary condition on the laser design is that the laser can be located anywhere on the InP chip.In the area of pulse shaping we report on a 20 channel monolithic pulse shaper capable of phase and amplitude control in each channel. Special attention is given to the calibration of the phase modulator and amplifier settings. Pulse compression and manipulation of pulse generated from modelocked semiconductor lasers is demonstrated using a 40 GHz quantum ...

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Sub-picosecond pulse generation by 40-GHz passively mode-locked quantum-dash 1-mm-long Fabry-Pérot laser diode

Cited by 30 publications

References 7 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

InAs/InP quantum-dash lasers

Integrated InP based modelocked lasers and pulse shapers

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