Subnanosecond ellipticity detector for laser radiation

Abstract

NbTiN superconducting nanowire detectors for visible and telecom wavelengths single photon counting on Si3N4 photonic circuits Appl. Phys. Lett. 102, 051101 (2013) Superconducting single-photon counting system for optical experiments requiring time-resolution in the picosecond range Rev. Sci. Instrum. 83, 123103 (2012) Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity Appl. Phys. Lett. 100, 083506 (2012) Plasmonic detector/spectrometer of subterahertz radiation based on two-dimensional electron system with embedded defect Appl. Phys. Lett. 100, 082102 (2012) Ultra-low-noise MoCu transition edge sensors for space applications

Growth of HgTe Quantum Wells for IR to THz Detectors

“…13 In the terahertz range, the magnitude of the circular photogalvanic effect (CPGE), which provides information on the radiation helicity in HgTe-based QWs, was substantially larger than that in GaAs QWs investigated previously. 11,35 This increased photogalvanic signal, proportional to the number of stacked QWs, was observed in multiple QW samples with 30 HgTe QWs.…”

“…22,34 We demonstrated that HgTe QWs can be used for all-electric detection of radiation ellipticity in a wide spectral range, from far-infrared (terahertz radiation) to mid-infrared wavelengths. The most important property of the materials relevant for detection of radiation ellipticity is the magnitude of the circular photogalvanic effect (CPGE), 11,12,35 which gives access to the helicity of a radiation field. Such detection is seen in various low-power CW and high-power pulsed laser systems.…”

“…12 The most attractive material for this type of detector is high-quality low-symmetry HgTe QWs, which is preferred over GaAs and SiGe because of its unique properties. In single HgTe QWs, large photogalvanic effects involving polarized laser beams from LWIR to THz ranges were found.…”

“…7, Cd 0.65 Hg 0. 35 Te/Cd 0.36 Hg 0.64 Te (350 nm/250 nm thick) microcavity structures grown by MBE were used to fabricate 3-lm to 3.5-lm IR photoemitters. In Ref.…”

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

“…The successes in MCT MBE alloys growth on GaAs allows to develop and grow high quality HgTe QW. Recently a detector system for room temperature electric detection of the polarization state of laser beams at terahertz frequencies by photogalvanic effects was realized using low symmetry GaAs and SiGe QWs [8]. In this study, we examined the growth of MCT heterostructures on Si (310) substrates with a diameter as large as 100 mm for IR FPAs of the spectral range of 3-5 μm and the formation and characteristics of p-n junctions and photoelectric parameters of IR photodetectors with different formats.…”