Subpicosecond gain and index nonlinearities in InGaAsP diode lasers

Hall, Kenneth C.; Lenz, G.; Darwish, Ali; Ippen, Erich P.

doi:10.1016/0030-4018(94)90538-x

Cited by 170 publications

(119 citation statements)

References 61 publications

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“…A fast component indicating spectral holeburning could not be extracted with sufficient certainty for this laser. A comparison of the obtained values for of 1.2 and 1.4 ps with previous examinations of semiconductor amplifiers shows that the gain relaxation is slightly slower than what was typically found (being in the range of 0.6-1 ps) [1], [10], [13], [15]. This seems to be in agreement with [20], where an increase of the gain relaxation time from 0.7 to 0.9 ps has been found when converting a special quantum well device from an amplifier to a laser.…”

Section: A Ultrafast Gain Compression and Relaxationsupporting

confidence: 55%

“…To experimentally measure the spatial resolution, we use zero delay pump and probe pulses. Under zero delay, there is a strong reduction of the transmitted probe intensity due to two-photon-absorption from the probe and the pump pulse [1], [13]. Measuring this two-photon-absorption contribution as function of the lateral separation of the beams, therefore, maps the spatial overlap of the two beams.…”

Section: Devices and Experimental Setupmentioning

confidence: 99%

“…For a quantitative analysis of the relaxation a fit with a sum of two exponential decays has been used, which in contrast to a single exponential decay is able to fit the data very accurately and has been used to fit experimental transmission curves before [1]. By several tests, we carefully chose the starting times of the fit to avoid an influence of the two-photon-absorption around zero delay.…”

Section: A Ultrafast Gain Compression and Relaxationmentioning

confidence: 99%

“…This takes place on timescales ranging from several picoseconds to femtoseconds and is responsible for significant gain and index nonlinearities [1], [2]. Investigating these fast or even ultrafast timescales is thus essential for getting a microscopic understanding of the relevant mechanisms that determine the interaction between the carrier system and the optical field.…”

mentioning

confidence: 99%

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Spatially Resolved Femtosecond Pump–Probe Spectroscopy in Broad-Area Semiconductor Lasers

Kaiser

Fischer

Elsäßer³

et al. 2006

IEEE J. Quantum Electron.

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Abstract-We investigate the ultrafast gain dynamics in broad-area semiconductor lasers with particular emphasis on spatial and spatiotemporal effects. We present a spatially resolved femtosecond pump-probe experiment which allows us to measure the compression and recovery of the gain with 250-fs temporal and 15 m spatial resolution. We find a significant spatial variation of the gain recovery time across the lateral laser coordinate indicating an influence of the extended laser structure on the ultrafast carrier relaxation. Moreover, we are able to follow the spatiotemporal relaxation of the ultrafast spatiospectral gain saturation within the extended semiconductor active area. We find diffusion-like broadening of the locally suppressed gain on two distinct ultrafast timescales, within several picoseconds and several tens of picoseconds, resulting from an interplay between intraband relaxation, spatial holeburning, and light propagation. Supported by microscopic modeling, our results provide insight into the different mechanisms and timescales associated with the spatiotemporal carrier dynamics. These findings are essential for the design of laterally extended semiconductor active devices for ultrafast optical signal processing applications.

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Section: A Ultrafast Gain Compression and Relaxationsupporting

confidence: 55%

Section: Devices and Experimental Setupmentioning

confidence: 99%

Section: A Ultrafast Gain Compression and Relaxationmentioning

confidence: 99%

mentioning

confidence: 99%

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Spatially Resolved Femtosecond Pump–Probe Spectroscopy in Broad-Area Semiconductor Lasers

Kaiser

Fischer

Elsäßer³

et al. 2006

IEEE J. Quantum Electron.

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“…More precisely, semiconductor lasers exhibit a very rich dynamical behavior on timescales down to a few hundred femtoseconds. This behavior is governed by complex nonlinear interactions of the light field with the complicated carrier dynamics in the semiconductor and has been extensively studied in pump-probe [52,53] and four-wave mixing (FWM) [54,55] experiments. Such nonlinear interactions also take place in a two color laser when it is operating on the two colors simultaneously: When the two laser wavelengths oscillate with a constant phase difference, a beating signal at the difference frequency appears.…”

Section: Direct Thz Emissionmentioning

confidence: 99%

Generation of Terahertz radiation with two color semiconductor lasers

Hoffmann

Hofmann²

2007

Laser & Photonics Reviews

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Abstract:We discuss and analyze concepts for the generation of tuneable continuous wave terahertz (THz) radiation with two color diode lasers. First, different geometries of two color lasers are reviewed. We show that the THz power of two color lasers in combination with external photomixers becomes sufficient for scanning THz imaging applications when optical amplification with a tapered amplifier is implemented. Then, the concept of direct emission of THz radiation out of a two-color semiconductor laser is reviewed and the potential of this concept with respect to THz bandwidth and achievable THz power is critically analyzed.Scheme of the FTECAL-laser cavity consisting of collimated laser diode, grating lens and mirror.

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Spectral Hole-Burning and Carrier-Heating Dynamics in Quantum-Dot Amplifiers: Comparison with Bulk Amplifiers

Borri

Langbein

Hvam

et al. 2001

phys. stat. sol. (b)

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The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain compression is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum-dot device is found, which is a promising prerequisite for high-speed applications.Gain and refractive index dynamics in semiconductor optical amplifiers (SOAs) have been widely investigated in the past, both experimentally and theoretically. Besides a fundamental interest, these studies give a direct insight about the ultimate limit in highspeed performances of semiconductor devices due to the intrinsic carrier dynamics. It is well known that the subpicosecond dynamics in bulk and quantum-well (QW) SOAs are dominated by spectral hole burning (SHB), with a recovery time below 100 fs, and carrier-heating (CH) effects, recovering over several hundreds of femtoseconds [1]. The recent achievement of fabricating InAs-based electrically pumped quantum-dot (QD) lasers [2] allows to extend these previous investigations to the quasi zero-dimensional case. Quantum-dot lasers fabricated until now do not show modulation bandwidths better than QW lasers, and are conjectured to be limited by the carrier capture into and relaxation in the QDs [2, 3]. However, most of the work dedicated until now to characterize directly carrier dynamics in self-organized QDs used mainly time-resolved photoluminescence experiments on unprocessed samples at low temperatures in the picosecond and nanosecond regime.In this work, the ultrafast gain dynamics of an electrically pumped InAs/InGaAs/ GaAs QD amplifier are measured at room temperature (RT), as schematically shown in Fig. 1, and compared with a bulk InGaAsP amplifier. A pump-probe experiment is performed with an heterodyne detection scheme, similar to earlier measurements on bulk and quantum well active waveguides [1]. Fourier-limited 150 fs laser pulses are 1 ) Corresponding

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Subpicosecond gain and index nonlinearities in InGaAsP diode lasers

Cited by 170 publications

References 61 publications

Spatially Resolved Femtosecond Pump–Probe Spectroscopy in Broad-Area Semiconductor Lasers

Spatially Resolved Femtosecond Pump–Probe Spectroscopy in Broad-Area Semiconductor Lasers

Generation of Terahertz radiation with two color semiconductor lasers

Spectral Hole-Burning and Carrier-Heating Dynamics in Quantum-Dot Amplifiers: Comparison with Bulk Amplifiers

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