Photoinduced interfacial electron transfer (ET) from molecular adsorbates to semiconductor nanoparticles has been a subject of intense recent interest. Unlike intramolecular ET, the existence of a quasicontinuum of electronic states in the solid leads to a dependence of ET rate on the density of accepting states in the semiconductor, which varies with the position of the adsorbate excited-state oxidation potential relative to the conduction band edge. For metal oxide semiconductors, their conduction band edge position varies with the pH of the solution, leading to pH-dependent interfacial ET rates in these materials. In this work we examine this dependence in Re(L P )(CO) 3 Cl (or ReC1P) [L P ) 2,2′-bipyridine-4,4′-bis-CH 2 PO(OH) 2 ] and Re-(L A )(CO) 3 Cl (or ReC1A) [L A ) 2,2′-bipyridine-4,4′-bis-CH 2 COOH] sensitized TiO 2 and ReC1P sensitized SnO 2 nanocrystalline thin films using femtosecond transient IR spectroscopy. ET rates are measured as a function of pH by monitoring the CO stretching modes of the adsorbates and mid-IR absorption of the injected electrons. The injection rate to TiO 2 was found to decrease by 1000-fold from pH 0-9, while it reduced by only a factor of a few to SnO 2 over a similar pH range. Comparison with the theoretical predictions based on Marcus' theory of nonadiabatic interfacial ET suggests that the observed pH-dependent ET rate can be qualitatively accounted for by considering the change of density of electron-accepting states caused by the pH-dependent conduction band edge position.