Substitutional effect on the transport properties of MnSi

Sivakumar, K.; Kuo, Y. K.; Lue, Chin‐Shan

doi:10.1016/j.jmmm.2006.02.066

Cited by 10 publications

(14 citation statements)

References 9 publications

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“…For an external pressure of P=1. 25 GPa, we expect a decrease in the Curie temperature of T C =13.5 K for the x=0.038 sample, a somewhat larger change than the T C =11 K that we observe. In addition, the relative change in the saturation moment observed in Fig.…”

Section: Resultscontrasting

confidence: 65%

“…The extreme sensitivity of T C to chemical substitution was thought to be due to an increased localization of the magnetic moments stemming from an increased negative chemical pressure. However, in a separate study [25], no significant change in T C was observed even with 10% Ge substitution. Here, we present a systematic investigation of the evolution of the electrical and magnetic behavior of MnSi with Al and Ga substitution, in part, to clarify these contradictory results.…”

Section: Introductionmentioning

confidence: 73%

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Effect of negative chemical pressure on the prototypical itinerant magnet MnSi

et al. 2017

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Abstract:The evolution of the magnetic and charge transport properties of the itinerant magnetic metal MnSi with the substitution of Al and Ga on the Si site is investigated. We observe an increase in unit cell volume indicating that both Al and Ga substitutions create negative chemical pressure. There are substantial increases in the Curie temperature and the ordered moment demonstrating that the substitutions give the magnetism a stronger itinerant character. The substitutions also increase the range of temperature and field where the skyrmion phase is stable due to a change in the character of the magnetism. In contrast to the behavior of pure MnSi and expectations for the intrinsic anomalous Hall effect, we find a significant temperature dependence to the magnitude and sign of anomalous Hall conductivity constant in Al or Ga substituted samples. This temperature dependence likely reflects changes in the spin-orbit coupling strength with temperature, which may have significant consequences on the helical and skyrmion states. Overall, we observe a continuous evolution of magnetic and charge transport properties through positive to negative pressure.

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Section: Resultscontrasting

confidence: 65%

Section: Introductionmentioning

confidence: 73%

Effect of negative chemical pressure on the prototypical itinerant magnet MnSi

et al. 2017

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“…We found that the solubility limit of Ge at T an = 1273 K is only around ∼ 0.07, which is less than that given in Ref. [13].…”

Section: Resultscontrasting

confidence: 75%

“…Metallurgical survey of solubility limit First, we investigate the solubility limit of Ge in MnSi 1−x Ge x following Ref. [13]. The samples with nominal Ge-concentration up to x 0 = 0.15 were kept in the electrical furnace at annealing temperature T an = 1273 K for 5 days.…”

Section: Resultsmentioning

confidence: 99%

“…Under negative chemical pressure introduced by the isovalent substitution of * senji77@dc.tohoku.ac.jp Si with Ge, increasing helical ordering temperature has also been reported in several experiments, however in a contradicting way: In Ref. [13], slight increase of T c (less than 3 K) was reported for MnSi with 10% Si substituted by Ge. In contrast, the other experiment shows that the helical ordering temperature can reach 39 K by replacing only 1% Si with Ge [14].…”

Section: Introductionmentioning

confidence: 80%

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Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi

Aji

Ishida

Okuyama

et al. 2019

Phys. Rev. Materials

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We have investigated the effect of Ge-substitution to the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From metallurgical survey, the solubility limit of Ge was found to be x = 0.144(5) with annealing temperature Tan = 1073 K. Magnetization measurements on MnSi1−xGex samples show that the helical ordering temperature Tc increases rapidly in the low-x range, whereas it becomes saturated at higher concentration x > 0.1. The Ge substitution also increases both the saturation magnetization Ms and the critical field to the fully polarized state Hc2. In contrast to the saturation behavior of Tc, those parameters increase linearly up to the highest Ge concentration investigated. In the temperature-magnetic field phase diagram, we found enlargement of the skyrmion phase region for large x samples. We, furthermore, observed the non-linear behavior of helical modulation vector k as a function of Ge concentration, which can be described qualitatively using the mean field approximation.

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Effect of Ru Substitution for Mn in the Si2Ti-Type Al-Mn-Si Alloy

Yamamoto

Takeuchi

2012

Journal of Elec Materi

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Substitutional effect on the transport properties of MnSi

Cited by 10 publications

References 9 publications

Effect of negative chemical pressure on the prototypical itinerant magnet MnSi

Effect of negative chemical pressure on the prototypical itinerant magnet MnSi

Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi

Effect of Ru Substitution for Mn in the Si2Ti-Type Al-Mn-Si Alloy

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