2018
DOI: 10.1002/pssa.201800333
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Substrate Effects on Charge Carrier Transport Properties of Single‐Crystal CVD Diamonds and an 8 mm Square Radiation Energy Spectrometer

Abstract: In an effort to enlarge a sensitive area of a diamond radiation energy spectrometer, a self‐standing chemical vapor deposition (CVD) single crystal is grown on an 8‐mm‐square “general grade” CVD single‐crystal diamond substrate fabricated by Element Six Ltd. The growth conditions that achieved a μτ product of 3 × 10−4 cm2 V−1 for holes in a CVD single‐crystal diamond grown on a high‐pressure and high‐temperature (HP/HT) type IIa single‐crystal diamond substrate elsewhere are adopted. The charge collection effi… Show more

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Cited by 3 publications
(2 citation statements)
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References 38 publications
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“…Note that the spectral characteristics for biases greater than +500 V were not measured because this was the maximum voltage available from the utilized amplifier. The obtained result is at the level of high‐quality CVD, HPHT, and specially selected natural diamond sample detectors (0.3–1%) …”
Section: Resultsmentioning
confidence: 85%
“…Note that the spectral characteristics for biases greater than +500 V were not measured because this was the maximum voltage available from the utilized amplifier. The obtained result is at the level of high‐quality CVD, HPHT, and specially selected natural diamond sample detectors (0.3–1%) …”
Section: Resultsmentioning
confidence: 85%
“…In the case of using diamond single crystals to achieve the same high detection efficiency, sensitive area of 100 mm 2 , and energy resolution as those of silicon drift detectors, an energyspectrometer-grade CVD single-crystal diamond with a sensitive area of 8 × 8 mm 2 has already been reported. (24) Moreover, high-quality substrate crystals of 10 × 10 mm 2 or larger that can be used for crystal growth already exist. (25) On the other hand, the μτ product of diamond is only of 10 −3 cm 2 /V order, (26) even in the highest quality CVD single crystal, which is only 1/1000 of that of silicon (electrons: >1 cm 2 /V; holes: ~1 cm 2 /V).…”
Section: Detector Conceptmentioning
confidence: 99%