Substrate-Integrated-Waveguide Power Dividers: An Overview of the Current Technology

Shehab, Shahriar Hasan; Karmakar, Nemai Chandra; Walker, Jeffrey P.

doi:10.1109/map.2019.2943308

Cited by 16 publications

(8 citation statements)

References 62 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…As denoted in Fig. 5 a, each of two power dividers adapts a classical T-junction design, where the densely distributed through-holes define the side-walls of the T-junction 32 – 34 . It is seen that the cascade of three T-junctions divides the power into equal parts at the input side and combines them into one channel at the output side, as depicted in Fig.…”

Section: The Process Of Antenna Element Design Based On Siwmentioning

confidence: 99%

A digital SIW-slot antenna array with FPGA implementation of beamforming

Li²,

Hou

et al. 2022

Sci Rep

View full text Add to dashboard Cite

The future satellite platform and 5G communication systems place high demands on antennas, in which the antenna should offer low-cost, lightweight, electronically steerable features. In this paper, the design of a digital slot antenna element based on substrate integrated waveguide (SIW) is proposed. SIW guides the microwave inside the substrate confined with planar metallic covers and through-hole synthetized side-walls in conventional applications, and can also radiate the microwave towards free space in antenna applications through opening slots in its metallic covers. The slot antenna element is realized by implementing PIN diodes across the gaps on both sides of the pad in the center of the slot antenna, to provide the switching freedom of the slot antenna element between radiating and non-radiating states. Besides, radial decoupling stubs are introduced into the bias line so as to reduce the leakage of the energy in the SIW structure. Applying a series of on/off states to the diodes produces various radiation patterns, thus wide range scanning is possible supposing that enough array elements are equipped. Finally, a digital SIW-slot array composed of 8 by 4 elements with tunable field programmable gate array circuits are fabricated and measured. The measured results validate the reconfigurable characteristics for the radiation pattern of the proposed digital SIW-slot antenna array without heavy engineering of phase shifter in conventional antenna arrays. The antenna is consisted by 4 by 8 elements and its dimension, simulated gain and radiation efficiency are 145 mm $$\times$$ × 127 mm $$\times$$ × 1.524 mm, 15 dBi and 53.5%, respectively. Our designed SIW antenna has the advantage of both size and weight. Furthermore, its digitalized control of beamforming allows a programming-friendly interface for smart antenna development.

show abstract

Section: The Process Of Antenna Element Design Based On Siwmentioning

confidence: 99%

A digital SIW-slot antenna array with FPGA implementation of beamforming

Li²,

Hou

et al. 2022

Sci Rep

View full text Add to dashboard Cite

show abstract

“…At the board level, SIW power combiners have been demonstrated in corporate, series, radial, Wilkinson, and Gysel structures [14]. However, these structures when scaled to the D band are too large for monolithic integration.…”

Section: Introductionmentioning

confidence: 99%

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Li,

Fay,

Hwang

2024

IEEE J. Microw.

View full text Add to dashboard Cite

We report a solid-state traveling-wave amplifier (TWA) realized through monolithic integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a stepped-impedance microstrip line as the input divider, but a low-loss, high-power-capacity SIW as the output combiner. The input signal is distributed to four GaN high-electron mobility transistors (HEMTs) evenly in magnitude but with 90°successive phase delays at the fundamental frequency. The HEMTs are distributed in the SIW in a period of a half wavelength at the second harmonic frequency, so that their outputs are combined coherently at the SIW output. To overcome the limited speed of the HEMTs, they are driven nonlinearly to generate second harmonics, and their fundamental outputs are suppressed with the SIW acting as a high-pass filter. The measured characteristics of the TWA agree with that simulated at the small-signal level, but exceeds that simulated at the large-signal level. For example, under an input of 15 dBm at 70 GHz, the output at 140 GHz is 38-dB above that at 70 GHz. Under an input around 70 GHz and 20 dBm, the output around 140 GHz is 14 dBm with a 3-dB bandwidth of 6%. This is not only the first D-band frequency multiplier based on the GaN HEMT technology, but also one with the highest output power and the lowest fundamental leakage among all D-band multipliers of different transistor technologies. This proof-of-principle demonstration opens the path to improve the power, gain and efficiency of sub-terahertz TWAs with higher-performance transistors and drive circuits. Although the demonstration is through monolithic integration, the approach is applicable to heterogeneous integration with the SIW and transistors fabricated on separate chips.

show abstract

“…Depending on its application a power divider can be used for both dividing and combining power. Some important parameters that define the performance of a power divider is its return loss bandwidth, insertion loss, and amplitude and phase imbalance [22]. Therefore, it is very important that the measurement results can show good agreement with the simulation results.…”

Section: Introductionmentioning

confidence: 99%

Micromachined Wideband Ridge Gap Waveguide Power Divider at 220–325 GHz

et al. 2022

View full text Add to dashboard Cite

A micromachined ridge gap waveguide power divider operating at 220-325 GHz is presented. The device is fabricated by SUEX dry film photoresist. Dry film photoresist can be used to obtain geometrical features with high accuracy using a robust fabrication process. The designed power divider has simple geometrical features and a wide band performance. The measured transmission coefficients are equal to -3.5 ± 0.4 dB at 220-325 GHz and the measured input reflection coefficient is below -12 dB at 220-325 GHz. The measurement results are in good agreement with simulations, demonstrating that the proposed fabrication method is suitable for the fabrication of waveguide components operating at the millimeter and sub-millimeter wave range. The presented low-loss ridge gap waveguide power divider may enable cost-effective and rapid fabrication of passive devices such as high gain antennas operating up to THz frequencies.INDEX TERMS Dry film photoresist, gap waveguide, micromachining, millimeter wave, power divider, sub-millimeter wave.

show abstract

Substrate-Integrated-Waveguide Power Dividers: An Overview of the Current Technology

Cited by 16 publications

References 62 publications

A digital SIW-slot antenna array with FPGA implementation of beamforming

A digital SIW-slot antenna array with FPGA implementation of beamforming

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Micromachined Wideband Ridge Gap Waveguide Power Divider at 220–325 GHz

Contact Info

Product

Resources

About