Super-radiation hard detector technologies: 3-D and widegap detectors

Rahman, M.; Al-Ajili, A.; Bates, R. L.; Blue, A.; Cunningham, W. R.; Doherty, F.; Gläser, M.; Horn, Mark W.; Melone, J.; Mikuž, M.; Quinn, Terence J; Roy, P.; O’Shea, V.; Vaitkus, J.; Wright, V.

doi:10.1109/tns.2004.835902

Cited by 16 publications

(18 citation statements)

References 21 publications

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“…Newer technologies such as GaN would reduce the need for replacing Si detectors in applications like the CERN Large Hadron Collider (LHC) in which the detectors operate at beam peak luminosities of roughly 10 35 cm −2 s −1 and would require replacement of the detectors more than once a year. 5 For particle tracker applications in accelerators, the requirement for large total radiation length in order to minimize effects of multiple scattering currently limits interest to diamond or SiC. However, for space applications GaN offers the prospect of making high-speed power handling devices that are highly radiation hard.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

“…However, for space applications GaN offers the prospect of making high-speed power handling devices that are highly radiation hard. 5 The changes of AlGaN/GaN parameters start at doses far exceeding the ones expected in space applications. The main bulk of experimental device results refers to proton irradiation because of the practical importance of protons of (1-100) MeV for space applications and because high energy protons are convenient when studying the radiation effects on GaN-based heterostructures.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

“…Vintusevich et al 61 found out that at 10 5 rad, the Ids increased but started to deteriorate Figure 12. I-V characteristics for epitaxial n-GaN diodes after either X-ray or 1 MeV neutron irradiation (after Rahman et al 5 ).…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

“…Neutron damage.-In the study of Rahman et al, 5 Schottky diode GaN detectors were irradiated with 1 MeV neutrons to fluences of 5 × 10 14 cm −2 and with 10-keV X-rays to doses of 600 Mrad. Neutrons have a significantly higher damage factor than X-rays and the neutron irradiation reduced charge collection efficiencies values to about 75% whereas the X-ray irradiation had almost no impact on this parameter since the carrier transit times across the depletion region of the detectors remained comparable to the defect capture times.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

“…4 In the case of GaAs, E d is 9.8 eV. 4,5,9 Figure 1 shows a plot of experimentally determined displacement energies in semiconductors as a function of inverse lattice constant. 4 The latter is a measure of how strongly bonded the component atoms are and should correlate with difficulty in creating lattice displacements and hence the relative radiation resistance of the semiconductor.…”

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

282

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

282

130

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show abstract

SiCReliability Aspects

Lutz

Basler

2021

Wide Bandgap Semiconductors for Power Electronics

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Ultrahigh gain AlGaN/GaN high energy radiation detectors

Howgate

Hofstetter

Schoell

et al. 2012

Physica Status Solidi (a)

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Due to its remarkable tolerance to high energy ionizing radiation, GaN has recently attracted attention as a promising material for dosimetry applications. However, materials issues that lead to persistent photoconductivity, poor sensitivity, and requirements for large operational voltages have been hurdles to realization of the full potential of this material. Here we demonstrate that the introduction of a two-dimensional electron gas channel, through the addition of AlGaN/GaN heterointerfaces, can be used to create intrinsic amplification of the number of electrons that can be collected from single ionization events, yielding exceptionally large sensitivities in ultralow dose rate regimes. Furthermore, anomalous photo-responses, which severely limit response times of GaN-based devices, can be eliminated using these heterostructures. Measurements using focused monochromatic synchrotron radiation at 1-20 keV, as well as focused 20 MeV protons, reveal that these devices provide the capability for high sensitivity and resolution real time monitoring, which is competitive with and complementary to state-of-the-art detectors. Therefore, AlGaN/GaN heterostructure devices are extremely promising for future applications in fields ranging from high energy physics to medical imaging.

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Super-radiation hard detector technologies: 3-D and widegap detectors

Cited by 16 publications

References 21 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

SiCReliability Aspects

Ultrahigh gain AlGaN/GaN high energy radiation detectors

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