Supercapacity of Soft-Expanded Graphite in Li-Intercalational Electric Current Generation

Shvets, R. Ya.; Grygorchak, I. I.; Курепа, Андрій Сергійович; Pokladok, N. T.; Sementsov, Yu. I.; Довбешко, Г. И.; Sheregii, Ye.; Seredyuk, B.

doi:10.12693/aphyspola.128.208

Cited by 3 publications

(3 citation statements)

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“…The influence of metal atoms of 3d-iron group on the matrix of semiconductor layered crystals was studied in details in [4]. Some peculiarities of the behavior of In4Se3 doped by metallic impurities have been discussed in [5,8,9]. To investigate the effect of metallic impurities on the layered In4Se3 structure EPR spectra are outlined in the Figures below.…”

Section: Presenting Main Materialsmentioning

confidence: 99%

“…Interest in these systems is motivated partly by the possibility of combining them with graphene aiming the creation of 2D electronic devices, e.g., field effect transistors with high on-off switching ratios and memory cells [7]. In recent work these materials were shown to possess magnetoresistive properties and were proved to be useful for magnetic sensors [4,5,8,9]. Nowadays sensitive magnetic sensors are utilized in plenty of technical systems, including modern anti-tank missiles to identify the center of the target area and a minimal armor region.…”

Section: Introductionmentioning

confidence: 99%

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BRIEF OVERVIEW OF THE EPR SPECTRA OF In4Se3 INTERCALATED BY Cu

Seredyuk¹,

Stefaniuk²

2018

MEM

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The EPR studies of electrical and magnetic properties of In4Se3 intercalated by copper are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak van-der-Waals bond in the interlayer space is studied. EPR spectra for In4Se3 crystal with the impurities of Cu at room temperature are analyzed.

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Section: Presenting Main Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

BRIEF OVERVIEW OF THE EPR SPECTRA OF In4Se3 INTERCALATED BY Cu

Seredyuk¹,

Stefaniuk²

2018

MEM

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“…The influence of metal atoms of 3d-iron group on the matrix of semiconductor layered crystals was studied in details in [4]. Some peculiarities of the behavior of In4Se3 doped by metallic impurities have been discussed in [5,8,9]. Impedance spectroscopy measurements in the frequency range of 10 -3 ÷ 10 6 Hz were carried out using a measuring complex "AUTOLAB" by the company "ECO CHEMIE".…”

Section: Fig 1 Inse Structure (A=b=4002 å C=24946 å) Intercalatementioning

confidence: 99%

Influence of the metallic impurities in a3b6 type layered semiconductors on their electrical, magnetic and structural properties

Serediuk¹,

Seredyuk²

2017

MEM

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The applications of magnetoresistive structures based on semiconductor crystals of InSe for high precision measurement of the magnetic field are outlined in this article. Possibilities of using magnetic field sensors based on InSe structures for revealing the armour military vehicles are discussed. The impact of metal impurities on the layered structure of the semiconductor material as referred to the strong covalent bond within the layers as well as the weak vander-Waals bond in the interlayer space is studied. Bode diagrams for InSe crystal with the impurities of nickel at different temperatures from liquid nitrogen to room temperatures, are analyzed. Topological images of crystal surface obtained by atomic force microscopy confirm the layered structure of nickel-intercalated InSe.

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