Niobium-germanium films have been deposited on sapphire substrates at 900~ by a chemical transport reaction method. The highest superconducting transition onset temperature Tc.o, of 22.4 K is observed for a nearly stoichiometric Nb3Ge film with the A 15-type structure (thickness ~ 93.5 tzm). Lattice constants for the Nb3Ge phase formed in the Nb-Ge films with both Tc,o,, above 22 K and Tc,miapoim above 21 K are found to extend from 5.143 to 5.153 A. Deposition rates for the obtained films are in the range of 2-10 lxm/min. Critical current densities for the Nb~Gejfilm with the highest Tc,o,, value are observed to be relatively low (~ 10 A/cm 2 at 19K at self-field). This is due to the coarse grain structure of the film or the low density of effectual pinning centers in the film. Field variations of the pinning forces operating in this film in magnetic fields both parallel to the film surface and perpendicular to the film surface are found to follow closely b l/e(1 -b) e, to which the pinning force for flux pinning at the surface of normal regions, such as grain boundaries, film surfaces, etc., is proportional, and where b is the reduced magnetic induction (B/Bc2). A small increase in Jc at low fields is caused by the presence of a small amount of the NbsGe3 phase in a Nb3Ge film, and seems attributable to additional flux pinning on NbsGe3-phase particles in the film.