2017
DOI: 10.1149/08010.0767ecst
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Superconformal Cobalt Fill through the Use of Sacrificial Oxidants

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Cited by 12 publications
(18 citation statements)
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“…[23][24][25] In order to achieve bottom-up growth of cobalt deposit, appropriate additives should be introduced into plating bath to achieve growth rate difference in the blind vias. [26][27][28] And, this difference is consistent with the diffusion-adsorption mechanism. [29][30][31][32] Josell et al 28 realized the superconformation filling of TSVs with high aspect ratio by adding polyethyleneimine (PEI) as suppressor into the plating solution, which is composed of cobalt sulfate, cobalt chloride and boric acid.…”
supporting
confidence: 76%
“…[23][24][25] In order to achieve bottom-up growth of cobalt deposit, appropriate additives should be introduced into plating bath to achieve growth rate difference in the blind vias. [26][27][28] And, this difference is consistent with the diffusion-adsorption mechanism. [29][30][31][32] Josell et al 28 realized the superconformation filling of TSVs with high aspect ratio by adding polyethyleneimine (PEI) as suppressor into the plating solution, which is composed of cobalt sulfate, cobalt chloride and boric acid.…”
supporting
confidence: 76%
“…While conventional copper deposition (i.e., the damascene process 11 ) required the use of a combination of organic additives-namely, a suppressor, an accelerator, and a leveller-to achieve superconformal filling, in case of cobalt electrodeposition the parasitic hydrogen evolution itself can assure the void-free bottom-up filling of trenches and vias. This effect was recently explained based on a "differential current efficiency fill" (DCEF) mechanism, 12 according to which the acid (H + ) content of the bath acts a sacrificial oxidant, the reduction of which creates pH gradients that promote a difference in the metal deposition rates between the wafer surface and the bottom of the features. 12,13 In order to fine-tune superconformal filling, either the acid content of the depositing bath is to be changed (practically applied pH values usually vary between 2 and 4) or buffer components (typically boric acid, H 3 BO 3 ) can be added to the bath.…”
mentioning
confidence: 99%
“…Some cobalt superconformal fill mechanisms for through silicon vias 5 and submicrometer trenches [6][7][8] have been reported in the literature. One such mechanism is termed S-shaped negative differential resistance (S-NDR), which functions by competition between additive adsorption/desorption and consumption characterized by hysteresis and inhibition breakdown in CV.…”
mentioning
confidence: 99%
“…7 Recently the differential current efficiency fill mechanism was proposed to give superconformal cobalt fill in sub-50 nm interconnect features. 8 In our previous paper, we proposed a hydrogen induced deactivation (HID) model for cobalt bottom-up fill in sub-5 nm features. 9 In this work, the additive deactivation is further studied and hydrogen reducz E-mail: Jun.Wu@atotech.com tion is believed to cause the additive deactivation.…”
mentioning
confidence: 99%