IEEE Trans. Electron Devices
 2023
DOI: 10.1109/ted.2023.3241271
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Suppression of Threshold Voltage Variation by TiN Surface Treatment for N-FinFETs With Very Thin Work Function Metal Layers

Tao Huang
1
,
Run-Ling Li
2
,
Han-Lun Cai
3
et al.
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Cited by 3 publications
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Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Choi,
Sim,
Kim
et al. 2024
Materials Science in Semiconductor Processing
1
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Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration

Choi,
Sim,
Kim
et al. 2024
Materials Science in Semiconductor Processing
1
0
0
0
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Effect of Stacked Work Function Metals on Gate Stress Reliability of n- and p-FinFETs

Chang,
Tsou,
Lin
2023
IEEE Trans. Electron Devices
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Significant Off-State Leakage Reduction for n-FinFET by Self-Adaptive TiN Etching

Huang,
Cai,
He
et al. 2023
IEEE Trans. Electron Devices
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