Surface-Controlled Metal Oxide Resistive Memory

Abstract

To explore the surface effect on resistive random-access memory (ReRAM), the impact of surface roughness on the characteristics of ZnO ReRAM were studied. The thickness-independent resistance and the higher switching probability of ZnO ReRAM with rough surfaces indicate the importance of surface oxygen chemisorption on the switching process. Furthermore, the improvements in switching probability, switching voltage and resistance distribution observed for ReRAM with rough surfaces can be attributed to the stable oxygen adatoms under various ambience conditions. The findings validate the surface-controlled stability and uniformity of ReRAM and can serve as the guideline for developing practical device applications.

Formation-free resistive switching in nanocrystalline tellurium oxide

“…The roughness of the film was ~20 nm which indicates a fairly rough surface with island-like growth. The rougher surface improves the RS probability by enhancing the interface surface area and easing the absorption of Ag ions at the interface [22].…”

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

“…The major issues for memristors are the long-term reliability (endurance) and uniformity, which hinders their further application in the semiconductor industry. Therefore, numerous strategies have been advanced to solve such issues, such as the meticulous regulation of the microstructure within the functional layer, the judicious selection of deposition techniques for optimal material properties, as well as well-designed interface engineering. , An alternative avenue involves exerting control over the resistive characteristics of these devices and relates to the nanocomposite thin film design. For example, the incorporation of metal nanoparticles serves to bolster the local electric field proximate to these particles, which facilitates the induction and precise control of conductive filament growth.…”

“…In addition, BTO stands as a well-established and enduring ferroelectric material, garnering substantial attention for its application as a functional layer in memristor devices . A comprehensive body of research has been dedicated to optimizing the performance of both ZnO and BTO-based memristor devices. ,, However, ZnO–BTO nanocomposite thin film has not yet been well studied as a functional layer for memristor, where both filament and ferroelectricity might contribute to the overall performance of the device. Regarding the other reported VAN-based memristors, , where the VAN design aims to reduce leakage current in the ferroelectric phase to enhance the device performance.…”

High-Performance Biomemristor Embedded with Graphene Quantum Dots

“…Hong prepared graphene oxide-based memristors and demonstrated the effect of the roughness of graphene oxide on the formation of conductive filaments [24]. Ke investigated the effect of surface roughness on the characteristics of ZnO random-access memories, and the improvement in the switching voltage and resistance distributions of RRAMs with rough surfaces was attributed to the stable distribution of oxygen atoms [25]. Sarkar embedded a layer of GQDs between polymethylmethacrylate (PMMA) sheets as a charge-trapping layer, and the device had a large memory window.…”