Surface defect engineering of mesoporous Cu/ZnS nanocrystal-linked networks for improved visible-light photocatalytic hydrogen production

Daskalakis, Ioannis; Vamvasakis, Ioannis; Papadas, Ioannis T.; Tsatsos, Sotirios; Choulis, Stelios A.; Κέννου, Στέλλα; Armatas, Gerasimos S.

doi:10.1039/d0qi01013h

Cited by 25 publications

(13 citation statements)

References 75 publications

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“…Semiconductors nanoparticles (NPs) have found numerous applications in different technological fields going from photovoltaic devices to medical imaging, lasers, LEDs and photocatalysis (Dao 2020;Rtimi et al 2021;Meikle et al 2020;Long et al 2020;Su et al 2020;Li et al 2019;Daskalakis et al 2020;Rtimi et al 2021). These applications are supported by their unique properties as compared to their bulk counterpart, which arise from the confinement of the charge carriers as a result of their small sizes.…”

Section: Introductionmentioning

confidence: 99%

Fast and effective catalytic degradation of an organic dye by eco-friendly capped ZnS and Mn-doped ZnS nanocrystals

Ouni

Mohamed

Chaaben

et al. 2022

Environ Sci Pollut Res

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Undoped and Mn-doped ZnS nanocrystals encapsulated with thioglycolic acid were synthetized and characterized with different techniques, and finally tested in the photodegradation of a methyl orange in aqueous solution under UV and sunlight irradiations.FTIR and X-ray diffraction results confirmed the functionalization of these nanocrystals surface by thioglycolic acid and the formation of crystalline structures of ZnS and Mn-doped ZnS with cubic and hexagonal phases. Calculated average size of ZnS nanocrystals was in the range of 2 -3 nm. It was observed a blue shift of the absorbance threshold and the estimated bandgap energies were higher than that of Bulk ZnS thus confirming the quantum confinement effect of charge carriers. Photoluminescence spectra of ZnS nanocrystals exhibited emission in the range of 410-490 nm and the appearance of an additional emission band around 580 nm (2.13eV) connected to the 4 𝑇1→ 6 𝐴1 transition of the Mn 2+ ions.Photodegradation of methylene orange with undoped and Mn-doped ZnS-TGA nanocrystals was investigated. Dye adsorption prior to photocatalysis using nanocrystals was studied via kinetic experiments and statistical physics models. The maximum dye adsorption capacity on doped ZnS-TGA was ~ 26.98 mg/g. The adsorption kinetic was found to follow the pseudosecond-order kinetic model.According to the statistical physics results, the calculated adsorption energy was 22.47-23.47 kJ/mol and it showed that the dye adsorption was associated to the hydrogen interaction where the removal process was feasible and multimolecular. The photocatalytic activity of undoped ZnS nanoparticles under UV irradiation showed better efficiency than doped nanocrystals thus indicating that manganese doping generated a dropping of the photocatalytic degradation of the dye. Dye degradation efficiency of 81.37% using ZnS-TGA nanocrystals was achieved after 6 min, which indicated that ZnMnS-TGA nanocrystals may be considered as an alternative low cost and environmental friendly material for facing water pollution caused by organic compounds via photodegradation processes.

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Section: Introductionmentioning

confidence: 99%

Fast and effective catalytic degradation of an organic dye by eco-friendly capped ZnS and Mn-doped ZnS nanocrystals

Ouni

Mohamed

Chaaben

et al. 2022

Environ Sci Pollut Res

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“…This indicated that the nanoarchitecture altered the potential differences across the pore walls, where mesopores created spatial separation for charge carriers. The spatially separated carriers created along the mesopores are much lower, establishing a higher EFD as the pore size reduces, resulting in large domain boundaries in nanocrystalline materials [22, 33, 34] . The mobile carriers accumulated or trapped, which affected, and created a localized charge build‐up at domain boundaries that acted as carrier trapping/recombination sites.…”

Section: Resultsmentioning

confidence: 99%

Plasma‐Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films

et al. 2022

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The synthesis of highly crystalline mesoporous materials is key to realizing high-performance chemical and biological sensors and optoelectronics. However, minimizing surface oxidation and enhancing the domain size without affecting the porous nanoarchitecture are daunting challenges. Herein, we report a hybrid technique that combines bottom-up electrochemical growth with top-down plasma treatment to produce mesoporous semiconductors with large crystalline domain sizes and excellent surface passivation. By passivating unsaturated bonds without incorporating any chemical or physical layers, these films show better stability and enhancement in the optoelectronic properties of mesoporous copper telluride (CuTe) with different pore diameters. These results provide exciting opportunities for the development of long-term, stable, and highperformance mesoporous semiconductor materials for future technologies.

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“…The spatially separated carriers created along the mesopores are much lower, establishing a higher EFD as the pore size reduces, resulting in large domain boundaries in nanocrystalline materials. [22,33,34] The mobile carriers accumulated or trapped, which affected, and created a localized charge build-up at domain boundaries that acted as carrier trapping/recombination sites. The density of surface states was reduced upon exposure to plasma, making carrier transport more ballistic in the nanoscale walls.…”

Section: Electrical Properties Of the Plasma-treated Filmsmentioning

confidence: 99%

“…[18][19][20] Techniques such as wet chemical passivation and physical layers have been widely employed for surface passivation. [21,22] However, these methods typically lead to the formation of high interfacial capacitance, impeding carrier mobility. Additional post-thermal annealing has been used to overcome the above issues and minimize interfacial capacitance, but this approach raises other technical problems including distortion and collapse of nanoarchitectured voids.…”

Section: Introductionmentioning

confidence: 99%

“…Several postprocessing techniques have been employed in porous and semiconductor materials to control defect sites at the lattice level to improve carrier transport and catalytic properties [18–20] . Techniques such as wet chemical passivation and physical layers have been widely employed for surface passivation [21, 22] . However, these methods typically lead to the formation of high interfacial capacitance, impeding carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

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Plasma‐Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films

et al. 2022

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Surface defect engineering of mesoporous Cu/ZnS nanocrystal-linked networks for improved visible-light photocatalytic hydrogen production

Abstract: Transition metal sulfides have been emerging as one of the most attractive and prospective catalysts for direct conversion of solar energy into chemical fuels. The intriguing compositional and electronic characteristics...

Cited by 25 publications

References 75 publications

Fast and effective catalytic degradation of an organic dye by eco-friendly capped ZnS and Mn-doped ZnS nanocrystals

Fast and effective catalytic degradation of an organic dye by eco-friendly capped ZnS and Mn-doped ZnS nanocrystals

Plasma‐Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films

Plasma‐Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films

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