Surface modification by high-energy heavy-ion irradiation in various crystalline ZnO facets

Jágerová, A.; Mikšová, Romana; Romanenko, Oleksandr; Plutnarová, Iva; Sofer, Zdeněk; Slepička, Petr; Mistrı́k, Jan; Macková, Anna

doi:10.1039/d1cp02388h

Cited by 7 publications

(1 citation statement)

References 66 publications

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“…66,67 In particular, E High 2 , A 1 (LO), and E 1 (LO) modes are very much sensitive to the O site disorder in the ZnO lattice. 68,69 The RT Raman scattering spectra (200–850 cm −1 ) of the pristine and implanted samples are presented in Fig. 4a, where the Raman modes E High 2 –E Low 2 , A 1 (TO), E 1 (TO), and E High 2 , and a broad band appear at 333, 380, 411, 437 and 579 cm −1 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

Das

Basak

2022

Phys. Chem. Chem. Phys.

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Section: Resultsmentioning

confidence: 99%

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

Das

Basak

2022

Phys. Chem. Chem. Phys.

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Tailoring the Electronic Structures and Spectral Properties of ZnO with Irradiation Defects Generated Under Intense Electronic Excitation: A Combined Experimental and DFT Approach

Han,

Li,

Pan

et al. 2024

Adv Funct Materials

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The relationship between the composition of the internal defect states, spectral properties, and correlated electronic structures of wurtzite zinc oxide (ZnO) crystals under 645 MeV Xe35+ irradiation is systematically investigated, employing experimental characterizations combined with first‐principle calculations. Based on the ion irradiation‐induced thermal expansion and relaxation processes, the high concentration of vacancy/interstitial defects produced from the transient disordered phase in molten track states trigger photoelectric changes, as follows: i) the generation of internal defect states effectively reduces the intrinsic bandgap (3.25 eV → 2.66 eV); ii) a large number of defective active sites inhibits the recombination between electron–hole pairs, causing dark conductance and photoconductance to increase with increasing damage levels until optimal fluence is achieved. Based on the density functional theory (DFT) with the GGA + U (GGA = generalized gradient approximation) method, the defective models associated with the different electronic structures, density of states, formation energy, and the nature of the chemical bonding are established. The narrowing of the bandgap observed experimentally and the enhancement of carrier concentration originating from the internal electron defect states are qualitatively verified, therefore laying the foundation for designing future nanoscale photoelectronic devices and microelectronics applications.

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Impact of swift heavy ion-induced point defects on nanoscale thermal transport in ZnO

Abdullaev,

Sekerbayev,

Rymzhanov

et al. 2024

Materials Research Bulletin

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Surface modification by high-energy heavy-ion irradiation in various crystalline ZnO facets

Abstract: Nowadays, self-assembled surface nanoscale structures on various ZnO facets are excellent templates for the deposition of semiconductor quantum dots and manipulation with surface optical transparency. In this work, we have...

Cited by 7 publications

References 66 publications

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

Tailoring the Electronic Structures and Spectral Properties of ZnO with Irradiation Defects Generated Under Intense Electronic Excitation: A Combined Experimental and DFT Approach

Impact of swift heavy ion-induced point defects on nanoscale thermal transport in ZnO

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