Surface Morphology and Electrical Properties of FTO (Fluorine Doped Tin Oxide) with Different Precursor Solution for Transparent Conducting Oxide

Abstract

Fluorine doped tin oxide (FTO) thin film was prepared by using two different precursor solutions which are tin (ii) chloride dihydrate and tin (iv) chloride pentahydrate. These two precursors are used in spray pyrolysis process to prepare the fluorine doped tin oxide thin film. Surface Morphology of the thin film was characterized using field emission scanning electron microscope (FE-SEM). FESEM image shows the particle distribution and the morphology of fluorine doped tin oxide thin film. Two point probe I-V measurement and UV-Vis spectroscopy were used to study the electrical and optical properties of both films. Both precursors produced different particles distribution, electrical properties and also optical properties. The results show that the sheet resistance (Rs) of fluorine doped SnO2 is about 49.24×106Ω for tin (iv) chloride pentahydrate compared to 43.03×1012Ω for tin (ii) chloride dihydrate