Surface morphology and ferroelectric properties of compositional gradient PZT thin films prepared by chemical solution deposition process

Performance of magnetoelectric PZT/Ni multiferroic system for energy harvesting application

“…On the other hand, with decreasing the growth pressure to 100 mTorr, the film is seen to be textured along (110) plane with reduced grain size and hence polarization degrades. The FE property observed for the PZT thin film deposited at 300 mTorr is remarkable as compared to the corresponding results reported by He et al [30]. They reported remanent polarization of 35.83 μC cm -2 for the PZT thin film deposited by chemical solution deposition technique [30].…”

“…The FE property observed for the PZT thin film deposited at 300 mTorr is remarkable as compared to the corresponding results reported by He et al [30]. They reported remanent polarization of 35.83 μC cm -2 for the PZT thin film deposited by chemical solution deposition technique [30]. Bose et al have fabricated PZT thin film on titanium substrate using rf magnetron sputtering technique but reported comparatively lower values of saturation and remnant polarizations [31].…”

PbZrO3‐Based Anti‐Ferroelectric Thin Films for High‐Performance Energy Storage: A Review

“…Layer structure composite is commonly used to the composite of ferroelectric or dielectric materials and anti-ferroelectric materials is commonly layer structure. [139][140][141][142] It is found that the composite of ferroelectric materials and anti-ferroelectric materials could improve the fatigue properties and reduce leakage current, leading to the enhancement of the electrical performance. [143][144][145] In addition, the composite of PZ films with insulator layer, ferroelectric layer, or relaxor ferroelectric layer could improve the energy storage performance by changing the polarization difference ΔP and the breakdown field strength.…”

Room temperature ferroelectric properties and leakage current characterics of Bi2FeMnO6/SrTiO3 bilayered thin films by chemical solution deposition

“…Ferroelectric materials, which have a reversible spontaneous polarization, have wide applications in nonvolatile random access memory devices, transducers and sensors . A resent focus in this area is the double‐perovskite structured (A 2 BB'O 6 ) ferroelectrics .…”

“…However, there is few report on chemical depositionderived double-perovskite thin films and it is a challenge to fabricate thus pure thin films with room temperature ferroelectricity because of the large leakage current [12]. It is well known that chemical-derived BiFeO 3 . The depositions were carried out by spin coating at 3000 rpm for 30 s. After every coating, the films were heated in air at 300 8C for 30 min on a hot plate.…”