Surface patterning of synthetic diamond crystallites using nickel powder

Wang, Junsha; Long, Wei; Chen, Jing; Yan, Jiwang

doi:10.1016/j.diamond.2016.04.010

Cited by 28 publications

(5 citation statements)

References 21 publications

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“…Meanwhile, a new weak diffraction peak located at approximately 42.2°has been observed for MCD Cu-600 °C, which is attributable to graphite (100), suggesting the creation of graphitic phase. [30] As for MCD Cu-800 °C film, diamond (111) and graphite (100) diffraction peaks reached the maximum, which indicates that 700 °C annealing is not only beneficial to the structure recovery of diamond but also promote the formation of graphite phase. However, after annealing at 800 and 900 °C, the graphite (100) diffraction peak disappears, which indicates that graphite deformation occurs under high-temperature annealing.…”

Section: Resultsmentioning

confidence: 89%

“…[31] Peak at 1332 cm À1 (D-band) corresponding to sp 3 -bonded carbon is known as diamond peak. [30] Peaks around 1380 cm À1 (D*-band) embodies the disordered carbon, which manifests the existence of a-C phase in the films. [32] The presence of G-bands around 1500 cm À1 represents the ordered carbons.…”

Section: Resultsmentioning

confidence: 99%

“…[ 9,27 ] The modification of the diamond plane (111) diffraction peak was detected after the subsequent annealing at 600 °C, which is attributed to the annealing leading to the recovery of ion implantation‐induced defects. According to previous reports, [ 28,29 ] when the implantation dose is below a certain critical density (N C : 1 × 10 22 vacancies cm −3 ), the damaged diamond is rich in point defects and can be annealed back to diamond. It is obvious that the implantation dose used in this study is lower than N C .…”

Section: Resultsmentioning

confidence: 99%

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Postannealing Temperature Effects on the Etching Behavior and Field Emission Properties of Cu‐Implanted Diamond

Shen

Ouyang

et al. 2023

Physica Status Solidi (a)

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To investigate the postannealing temperature effects on the surface etching behavior and electron field emission (EFE) properties of the Cu‐implanted microcrystalline diamond (MCD) films, they are subjected to furnace annealing in a temperature range of 600–900 °C under N2 atmosphere at a rapid annealing rate. The etching behavior happens when the samples are annealed at 700 °C and above. The EFE performances enhance first and then decrease with the increasing annealing temperature. The optimum EFE property with a low turn‐on field of 6.42 V μm−1 is obtained after the Cu‐implanted MCD film is annealed at 700 °C. The enhancement in EFE properties originates from the presence of nanographitic phase and the formation of electron‐rich Cu nanoparticles, which encourage a higher efficient electron transport. In contrast, the structural studies reveal that when the samples annealed at 800 °C and above, Cu nanoparticles evaporate from the diamond surface and the sp2‐bonded carbon decomposes. Consequently, etch pits appear on the surface of the MCD sample. Moreover, it demonstrates that graphitization is the dominant mechanism of the diamond surface etching behavior and the enhancing of EFE properties.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Postannealing Temperature Effects on the Etching Behavior and Field Emission Properties of Cu‐Implanted Diamond

Shen

Ouyang

et al. 2023

Physica Status Solidi (a)

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“…Finally, the diamond surface was corroded in a mixed high-temperature gas flow environment of hydrogen and nitrogen, and P-diamond abrasives were successfully prepared. Wang Junsha et al [ 14 , 15 , 16 ] also used corrosion methods to compare the differences in corrosion degree and morphology of diamond {100} and {111} crystal planes caused by corrosion agents such as Fe, Co, and Ni. They further explored and optimized the chemical reaction mechanism of these corrosion agents on M-diamond, thereby optimizing the corrosion process.…”

Section: Introductionmentioning

confidence: 99%

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Zhang,

Xu,

Zhu

et al. 2024

Materials

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SiC ceramics are typically hard and brittle materials. Serious surface/subsurface damage occurs during the grinding process due to the poor self-sharpening ability of monocrystalline diamond grits. Nevertheless, recent findings have demonstrated that porous diamond grits can achieve high-efficiency and low-damage machining. However, research on the removal mechanism of porous diamond grit while grinding SiC ceramic materials is still in the bottleneck stage. A discrete element simulation model of the porous diamond grit while grinding SiC ceramics was established to optimize the grinding parameters (e.g., grinding wheel speed, undeformed chip thickness) and pore parameters (e.g., cutting edge density) of the porous diamond grit. The influence of these above parameters on the removal and damage of SiC ceramics was explored from a microscopic perspective, comparing with monocrystalline diamond grit. The results show that porous diamond grits cause less damage to SiC ceramics and have better grinding performance than monocrystalline diamond grits. In addition, the optimal cutting edge density and undeformed chip thickness should be controlled at 1–3 and 1–2 um, respectively, and the grinding wheel speed should be greater than 80 m/s. The research results lay a scientific foundation for the efficient and low-damage grinding of hard and brittle materials represented by SiC ceramics, exhibiting theoretical significance and practical value.

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“…To obtain better surface properties and processing efficiency, some researchers started to explore new electrode tool materials, and it was found that some transition metals have a good corrosion effect on PCD, such as Ti, Ni, and Co. Wang used nickel powder to corrode single crystal diamond under high temperature and pressure [10], and Imoto et al found that microstructures on nickel die can be etched on single crystal diamond surface [11]. Masao Uemura analyzed the catalytic effect of Fe, Ni, and Co on diamonds and found that iron group elemental metals catalyze the graphitization of diamonds [12].…”

Section: Introductionmentioning

confidence: 99%

Research on the mechanism and process of polycrystalline diamond by EDM

Jiang

Sun

et al. 2023

Int J Adv Manuf Technol

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Traditional electric discharge machining (EDM) uses the copper electrode to machine polycrystalline diamond (PCD), and the machining efficiency and machining quality have been poor. To improve the machining efficiency and machining quality, this study uses white copper as the electrode to machine the surface of the PCD workpiece and adds graphene powder to the dielectric for mixed powder EDM. The surface properties and processing mechanism of PCD under different processing methods were analyzed by scanning electron microscope (SEM), X-ray diffraction (XRD), and Raman spectroscopy, and the surface quality and processing efficiency of PCD were analyzed by material removal rate (MRR) and surface roughness (SR). The results showed that the MRR of the white copper electrode increased by 65% compared with that of the purple copper electrode at low parameters, and the MRR increased again by 87% after adding graphene, and the SR decreased by 13%. The graphitization of PCD diamond processed by the white copper electrode was greater than that of the purple copper electrode by Raman spectroscopy and XRD analysis, and the addition of graphene increased the graphitization again. The results show that when processing with copper electrode, the way of processing PCD is mainly to remove the binder, and the effect of processing diamond particles is not obvious; when processing with white copper electrode, making diamond graphitization is the main removal method, and after adding graphene in the dielectric, the removal method changes to a combination of diamond graphitization and high discharge energy removal.

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Surface patterning of synthetic diamond crystallites using nickel powder

Cited by 28 publications

References 21 publications

Postannealing Temperature Effects on the Etching Behavior and Field Emission Properties of Cu‐Implanted Diamond

Postannealing Temperature Effects on the Etching Behavior and Field Emission Properties of Cu‐Implanted Diamond

Material Removal Mechanism of SiC Ceramic by Porous Diamond Grinding Wheel Using Discrete Element Simulation

Research on the mechanism and process of polycrystalline diamond by EDM

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