1999
DOI: 10.1016/s0039-6028(99)00050-3
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Surface relaxation and rumpling of TiO2-terminated SrTiO3(001) determined by medium energy ion scattering

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Cited by 62 publications
(44 citation statements)
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“…Both our simulations and calculations [11] gave values, which are closer to the experimental data [6]. Lastly, it was found in recent MEIS experiments [9] for the Ti-terminated SrTiOs surface that s ~2 %, which is close to our result in Table 4.…”
Section: Resultssupporting
confidence: 91%
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“…Both our simulations and calculations [11] gave values, which are closer to the experimental data [6]. Lastly, it was found in recent MEIS experiments [9] for the Ti-terminated SrTiOs surface that s ~2 %, which is close to our result in Table 4.…”
Section: Resultssupporting
confidence: 91%
“…A comparison of our SM calculations for the surface structure with the ab initio plane-wave studies [ll,12],other SM simulations [19] and experimental results [6,7,9] is presented in Table 4. The agreement of our results with the plane-wave ab initio calculations and the experimental data is very good.…”
Section: Resultsmentioning
confidence: 99%
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“…SrTiO 3 has found usage in optical switches, grain-boundary barrier layer capacitors, catalytic activators, waveguides, laser frequency doubling, high capacity computer memory cells, oxygen gas sensors, semiconductivity, etc. [9][10][11][12][13][14][15][16] During the last few decades, the electronic, structural, elastic, and optical properties of SrTiO 3 (STO), as a model of ABO 3 perovskite, have been under intensive investigation both experimentally [17][18][19][20][21][22][23] and theoretically. [9][10][11][12][13][24][25][26][27] But, from a theoretical point of view, a proper description of its electronic properties is still an area of active research.…”
Section: Introductionmentioning
confidence: 99%
“…17,19,20 Theoretical calculations using several techniques have led to band gaps of SrTiO 3 in the ranges 1.71 to 2.2 eV for LDA and GGA, 6, 10, 12 1.87 to 3.63 eV for Hybrid DFT, 5,9,10 and value as high as 11.97 eV for the Hatree-Fock (HF) method. 10 In this paper, we present a simple, yet robust, and ab-initio method, based on self consistent solutions of the pertinent system of equations, [51][52][53][54] that correctly predicts band gap values and related electronic properties of SrTiO 3 rigorously, from first principle, within the LCAO-GGA formalism.…”
Section: Introductionmentioning
confidence: 99%