“…The band discontinuities of heterojunctions are key design parameters, since the valence and conduction band offsets, E V and E C , determine the transport and confinement properties at the interface. The interaction of C 60 with InP(001)-(2 × 4) has been studied by a number of surface sensitive techniques [1][2][3]. The growth mechanism of C 60 molecules on InP(001) as well as the bonding at the interface were studied by scanning tunnelling microscopy (STM), (high resolution) electron energy loss spectroscopy ((HR)EELS), x-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) and low energy electron diffraction (LEED) [1,2].…”