Surge current capability of SiC MOSFETs in AC distribution systems

Rodrigues, Rostan; Zhang, Yuzhi; Jiang, Tianyan; Aeloiza, Eddy; Cairoli, Pietro

doi:10.1109/wipda.2018.8569167

Cited by 18 publications

(3 citation statements)

References 20 publications

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“…The half-sine waves load on the body diodes is applied for 10ms at room temperature, which is corresponding to 50Hz grid frequency. The surge current capability of SiC MOSFET at different load time can be found in [2].…”

Section: Approachmentioning

confidence: 99%

Surge current test of SiC MOSFET with planar Assembling and Joining Technology

Ye,

Hensler,

Basler

et al. 2023

ISPS'23 Proceedings

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Section: Approachmentioning

confidence: 99%

Surge current test of SiC MOSFET with planar Assembling and Joining Technology

Ye,

Hensler,

Basler

et al. 2023

ISPS'23 Proceedings

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“…Most of the researches have addressed the variable directly affecting factors on export. This study will cover the gap of mediation of attitude between distribution capability and product exporting (Ho, Ng, Vivi, Ng, & Susela, 2020;Rodrigues, Zhang, Jiang, Aeloiza, & Cairoli, 2018). A survey report of Thailand fruit market has examined the attitudes of traders to export the durian fruit, local traders of the market have given their positive feedback and a year later they were asked the same question, it was observed that 8% of the respondents with a positive attitude that was local traders were exporting their fruits to the foreign markets.…”

Section: Distribution Capability Attitude Towards Exporting and Durimentioning

confidence: 99%

Determinants of Marketing Performance on Durian Product for Exporting: Study in South of Thailand

Sittisom¹,

Thanomvech²,

Mekhum³

et al. 2020

RWE

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Thailand is the major exporter of durian products worldwide. Durian is the most important fruit and it’s called the king of fruits in Thailand. The economy of Thailand majorly bases on the exporting of durian to other related countries. The major objective of this study to find out the determinants of marketing performance that affect the durian product exporting in the south of Thailand. Respondents of this study are employees working in exporting companies working in the south of Thailand. Data is collected through a drop-down survey method and a questionnaire is used. After it, Smart PLS used for analysis. Results revealed that determinants of marketing performance like (Product capability, Promotion, and Distribution capability) have a positive, significant impact on exporting of durian. Two mediators including attitude towards exporting have a positive effect but the second motivation to export has no effect on durian export. Attitude towards exporting mediates the relationship between distribution capability and exporting of durian. Motivation to export has no mediation between promotion capability and export of durian. The study recommends to exporters that for increasing export to other countries they should focus on marketing performance determinants.

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“…Some researchers have investigated the failure of SiC MOSFETs under short circuit and surge current conditions with a thermal model [18]. Some researchers have tested the maximum surge currents of 1200 V SiC MOSFETs’ body diodes under various conditions [19,20]. The test conditions were varied by changing temperatures, pulse width of surge currents, gate voltages and so on.…”

Section: Introductionmentioning

confidence: 99%

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

Wang

Ren

et al. 2019

Micromachines

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In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experimental results show that the maximum surge currents that the devices can withstand are similar for both cases. It is found that short circuits occurred between the gate and the source in the failed devices. The characteristics of the body diode have also changed after the tests. By measuring the device characteristics after each surge current is applied, it can be concluded that the damages to the gate oxide layer and the body diode occurred only when the maximum surge current is applied. By decapping the failed devices and observing the cross section of the damaged cell, it is found that high temperature caused by excessive current flow through the devices during the surge tests is the main reason for the device failure. Finally, the TCAD simulation of the devices has been carried out to bring insight into the operation of the devices during the surge events.

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Surge current capability of SiC MOSFETs in AC distribution systems

Cited by 18 publications

References 20 publications

Surge current test of SiC MOSFET with planar Assembling and Joining Technology

Surge current test of SiC MOSFET with planar Assembling and Joining Technology

Determinants of Marketing Performance on Durian Product for Exporting: Study in South of Thailand

Investigation of 1200 V SiC MOSFETs’ Surge Reliability

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