Swift heavy ion irradiation and annealing studies on the I–V characteristics of N-channel depletion Metal–oxide–semiconductor field-effect transistors

Abstract

N-channel depletion MOSFETs were irradiated with different swift heavy ions viz., 175 MeV Ni 13? ions, 140 MeV Si 10? ions, 100 MeV F 8? ions, 95 MeV O 7? ions and 48 MeV Li 3? ions in the same dose range of 100 krad-100 Mrad.The different electrical characteristics of MOSFETs were studied before and after irradiation and after annealing. The degradation and recovery mechanisms were studied systematically. It was found that around 80 % degradation in transconductance and mobility and almost 100 % recoveries in the electrical characteristics of irradiated MOSFETs after annealing.