Synchrotron studies of top-down grown silicon nanowires

Turishchev, S. Yu.; Parinova, E. V.; Nesterov, D. N.; Koyuda, D. A.; Sivakov, Vladimir; Schleusener, Alexander; Терехов, В. А.

doi:10.1016/j.rinp.2018.04.071

Cited by 5 publications

(2 citation statements)

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“…The probing depth for Si K edge XANES is established around 65 nm 20 that is deeper than known 5 nm for Si L 2,3 XANES. There are known a couple of papers, including ones, subjected by Si nanowire arrays studies 20,30,32,33 based on XANES K-edge spectroscopy results. On the other hand, the 65 nm probing depth is sufficiently smaller than removed Si wires arrays parts with height that is more than few micrometers (as shown in Figs 1 or 2).…”

Section: Resultsmentioning

confidence: 99%

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Turishchev

Parinova

Pisliaruk

et al. 2019

Sci Rep

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Atomic, electronic structure and composition of top-down metal-assisted wet-chemically etched silicon nanowires were studied by synchrotron radiation based X-ray absorption near edge structure technique. Local surrounding of the silicon and oxygen atoms in silicon nanowires array was studied on as-prepared nanostructured surfaces (atop part of nanowires) and their bulk part after, first time applied, in-situ mechanical removal atop part of the formed silicon nanowires. Silicon suboxides together with disturbed silicon dioxide were found in the composition of the formed arrays that affects the electronic structure of silicon nanowires. The results obtained by us convincingly testify to the homogeneity of the phase composition of the side walls of silicon nanowires and the electronic structure in the entire length of the nanowire. The controlled formation of the silicon nanowires array may lead to smart engineering of its atomic and electronic structure that influences the exploiting strategy of metal-assisted wet-chemically etched silicon nanowires as universal matrices for different applications.

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Section: Resultsmentioning

confidence: 99%

Surface deep profile synchrotron studies of mechanically modified top-down silicon nanowires array using ultrasoft X-ray absorption near edge structure spectroscopy

Turishchev

Parinova

Pisliaruk

et al. 2019

Sci Rep

Self Cite

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“…Many techniques have been developed on the basis of synchrotron radiation. A number of X-ray and electron spectroscopy techniques together with known sample preparation/modification techniques can be applied to study the specificity of the local atomic environment of the tin, oxygen, and silicon atoms over the surface layer and the bulk of all structures formed [196][197][198].…”

Section: Atomic and Electronic Features Studies In Tin/tin Oxide Nano...mentioning

confidence: 99%

Tin/Tin Oxide Nanostructures: Formation, Application, and Atomic and Electronic Structure Peculiarities

Liu,

Sivakov

2023

Nanomaterials

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For a very long period, tin was considered one of the most important metals for humans due to its easy access in nature and abundance of sources. In the past, tin was mainly used to make various utensils and weapons. Today, nanostructured tin and especially its oxide materials have been found to possess many characteristic physical and chemical properties that allow their use as functional materials in various fields such as energy storage, photocatalytic process, gas sensors, and solar cells. This review discusses current methods for the synthesis of Sn/SnO2 composite materials in form of powder or thin film, as well as the application of the most advanced characterization tools based on large-scale synchrotron radiation facilities to study their chemical composition and electronic features. In addition, the applications of Sn/SnO2 composites in various fields are presented in detail.

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