Synthesis and characterization of PbS nanowires doped with Tb3+ ions by using chemical bath deposition method

Abstract

Crystalline lead sulfide (PbS) nanowires doped with terbium (Tb 3+) ions were synthesized by the chemical bath deposition method at room temperature. The powder was obtained from an aqueous solutions using lead acetate dehydrate, terbium nitrate, thiourea, potassium hydroxide and ammonia. The terbium molar concentrations were varied in the deposition process to investigate the effect on the structural, optical, morphological and luminescent properties of PbS nanowires. The crystalline size was found to be dependent on the concentration of the Tb 3+ ions used. The estimated average crystalline sizes were calculated from the X-ray diffraction and found to be 34, 33 and 37 nm for PbS: 0% Tb 3+ , PbS: 0.2% Tb 3+ and PbS: 0.5% Tb 3+ , respectively. The scanning electron microscopy micrographs depict nanowire shape for the undoped as well as Tb-doped samples. The energy-dispersive X-ray and Auger electron spectroscopy analyses confirmed the presence of all the expected elements. The solid powder nanowires exhibited high absorptions in the UV-Vis regions. The band gap energies were estimated in the range of 1.99-2.46 eV. The absorption edge and the band gap energies of these PbS nanowires have shifted depending on the concentration of the dopant. The maximum luminescence intensity was obtained for PbS: 0.2% Tb 3+ ions and luminescent quenching was observed for higher terbium concentrations.

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

“…From the figure, it is observed that the bandgap energy of all the films is 2.0 eV except for the films deposited with the 0.05 M and 0.15 M concentrations of Mn 2+ whose values decreased to 1.9 eV each. Similar result of bandgap tunning to the values in this range in addition to high absorbance values for the thin films of PbS doped with rare earth element (terbium -Tb) have also been "reported by [30]". This tunned range of bandgap values for the deposited thin films of PbMnS is within the solar spectrum (UV-VIS regions) and are thus ideal materials for solar cell applications for solar energy harnessing and development.…”

Effect of the Helium Background Gas Pressure on the Structural and Optoelectronic Properties of Pulsed-Laser-Deposited PbS Thin Films

“…The Raman spectra of the PLD-PbS films ( Figure 5 a) revealed several resolved bands. The broad bands peaking at 200 cm −1 , 437 cm −1 , and 630 cm −1 are related to the first, second, and third harmonics of the longitudinal optical (LO) phonon mode, respectively [ 46 , 47 ]. The line peaking at 520 cm −1 corresponds to the first-order optical phonon of the underlying silicon substrate [ 48 ].…”

Recent advances in CdS heterojunctions: morphology, synthesis, performances and prospects

“…CBD has become one of the most widely used methods by virtue of its advantages of good controllability, uniformity, low cost and simple technology. [66][67][68][69] CBD is a technique for preparing semiconductors by immersing substrates such as glass or quartz in precursor solutions containing metal cations, anions, and chelating agents, allowing cations and anions to rst bind and then deposit on the substrate. 31,70,71 The synthesis of TiO 2 /CdS/MoS 2 ternary heterojunction nanorods was studied by Jang.…”