2020
DOI: 10.1016/j.matchemphys.2020.123379
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Synthesis and enhanced dielectric properties of copper oxidenanoparticles

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Cited by 17 publications
(6 citation statements)
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“…These results can be attributed to the large surface area of the added nanoparticles which increased the surface conductivity of the designed modified sensor. Additionally, the higher detection results observed by using the modified sensor could be due to the high dielectric permittivity value of CuONPs (≈10 4 ) and Al 2 O 3 NPs (≈7.8-11.1) at ambient temperature [58,59]. The dynamic response of the designed NTX-TPB conventional and modified NTX-TPB-CuO/Al 2 O 3 NPs nanocomposite sensors were investigated under optimized experimental conditions to detect the difference between the instant potential time and its steady-state value (1 mV) [60].…”
Section: Characteristics Of the Constructed Sensorsmentioning
confidence: 99%
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“…These results can be attributed to the large surface area of the added nanoparticles which increased the surface conductivity of the designed modified sensor. Additionally, the higher detection results observed by using the modified sensor could be due to the high dielectric permittivity value of CuONPs (≈10 4 ) and Al 2 O 3 NPs (≈7.8-11.1) at ambient temperature [58,59]. The dynamic response of the designed NTX-TPB conventional and modified NTX-TPB-CuO/Al 2 O 3 NPs nanocomposite sensors were investigated under optimized experimental conditions to detect the difference between the instant potential time and its steady-state value (1 mV) [60].…”
Section: Characteristics Of the Constructed Sensorsmentioning
confidence: 99%
“…Table 1 reported the effective potential response and the potentiometric behavior of the constructed NTX-TPB and NTX-TPB-CuO/Al2O3NPs nanocomposite sensors. [58,59]. The dynamic response of the designed NTX-TPB conventional and modified NTX-TPB-CuO/Al2O3NPs nanocomposite sensors were investigated under optimized experimental conditions to detect the difference between the instant potential time and its steady-state value (1 mV) [60].…”
Section: Characteristics Of the Constructed Sensorsmentioning
confidence: 99%
“…This maximum value of real part of dielectric constant may be due to maximum concentration of Cu vacancies or impurities due to Cu defects at interstitial in maximum Cu 2 O doped composites which has also be calculated using First principle calculations. Therefore the mammoth value of real part of dielectric constant lies in range of 1000 to 100000 results due decreasing grain resistance due to Cu/O vacancies calculated from nyquist plots which consists of semicircle plots represent grain and grain boundaries [2].…”
Section: A C Conductivitymentioning
confidence: 99%
“…CuO have properties of very rare p-type semiconductor with bulk Cu vacancies. It has been found shows that Cu and O vacancies is responsible for high value of dielectric constant in CuO [2]. The high value of dielectric constant in CuO Nano structures makes it wide use in devices which uses very high frequency [3].CuO material are used as super capacitors and it is extensively use in electrical battery [4].…”
Section: Introductionmentioning
confidence: 99%
“…This issue is similar to the challenges faced by traditional BaTiO 3 materials and other GDP materials. 4–7…”
Section: Introductionmentioning
confidence: 99%