Synthesis and evaluation of novel resist monomers and copolymers for ArF lithography

Nakayama, Osamu; Fukumoto, Takashi; Tachibana, Miki; Sato, Junko; Kitayama, Masahiko; Kajiyashiki, Tsuyoshi

doi:10.1117/12.656159

Cited by 3 publications

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“…3) We focused on monomers with acid-cleavable protective groups, and we propose some novel monomers. 4) There were various reports about the deprotection reaction of CA positive-tone resists [5][6][7][8][9][10][11][12][13] , because the reactivity of a protective group is a factor affecting resist properties, i.e., sensitivity, dissolution behavior, resolution, and Line width roughness. However, there are few reports focused on the deprotection reactions of monomers with protective groups.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and evaluation of novel resist monomers and copolymers for ArF lithography: Part II

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Fukumoto

Tachibana

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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We synthesized several new monomers with an acid-cleavable protective group and investigated their deprotection reactions. Polymers were prepared using these monomers, and their thermal properties and dissolution rates were investigated. The acidic reactivity of protective groups of these monomers was evaluated using a method we developed. The activation energies [E a (experimental)] calculated using reaction rate constants were found to correlate to some extent with the activation energies [E a (calculated)] calculated from MOPAC. The dissolution rates of some polymers containing similar protective groups as structures were measured. The dissolution rates were related to the polarity and molecular volume (MV) of the decomposed products of protective groups.

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