Synthesis and transient photocurrent behavior of Zn-doped In2O3 nanorods

Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties

“…17,47,49−53 Subgap states are also observed which could be due to the presence of oxygen vacancies as a common feature in In 2 O 3 . 45,54,55 Upon the incorporation of Zn dopants, the E g value was decreased to ∼3.51 and ∼3.31 eV for LD-IZO and HD-IZO, respectively, which is in good agreement with previous reports. 44,45,56 Such obtained band gap energies are consistent with those acquired utilizing the scanning tunneling spectroscopy (STS) (Figure S8 and Note S1).…”

“…45,54,55 Upon the incorporation of Zn dopants, the E g value was decreased to ∼3.51 and ∼3.31 eV for LD-IZO and HD-IZO, respectively, which is in good agreement with previous reports. 44,45,56 Such obtained band gap energies are consistent with those acquired utilizing the scanning tunneling spectroscopy (STS) (Figure S8 and Note S1). The observed lower value of the energy band gap for LD-IZO is mostly owing to the localized states induced by the Zn dopants.…”

“…The optical band gap ( E g ) is obtained by extrapolating the linear part of the (αhυ) 1/2 versus hυ plot. , The E g for intrinsic In 2 O 3 is found to be ∼3.63 eV which is close to the reported values from the literature. ,,− Subgap states are also observed which could be due to the presence of oxygen vacancies as a common feature in In 2 O 3 . ,, Upon the incorporation of Zn dopants, the E g value was decreased to ∼3.51 and ∼3.31 eV for LD-IZO and HD-IZO, respectively, which is in good agreement with previous reports. ,, Such obtained band gap energies are consistent with those acquired utilizing the scanning tunneling spectroscopy (STS) (Figure S8 and Note S1). The observed lower value of the energy band gap for LD-IZO is mostly owing to the localized states induced by the Zn dopants . Despite the presence of the Mossec–Burstein effect, the further band gap narrowing of HD-IZO possibly indicates the significant influence from the many-body interaction ( e.g.…”

“…For intrinsic In 2 O 3 , dominant peaks at 32.6°, 36.2°, and 38.9° correspond to the (110), (006), and (202) crystal planes of rhombohedral In 2 O 3 (JCPDS card 22-0336, a = b = 5.487 Å, c = 14.510 Å), respectively. No extra peaks were observed related to zinc oxide. − Additionally, for LD- and HD-In 2 O 3 , portions of the aforementioned peaks are slightly shifted toward higher values, and their intensities are greatly reduced compared to undoped In 2 O 3 , which is caused by the reduction of crystallinity. Such shifts may be associated with the ionic radius of In (0.81 Å), which is larger than Zn (0.74 Å) .…”

“…It is also observed that the E f of LD-IZO shifts close to that of the conduction band maximum ( E c ) due to the injection of free electrons. Although the current literature is ambiguous regarding the exact mechanism of zinc doping of indium oxide, we consider that the substitution of Zn 2+ for In 3+ may result in the generation of additional oxygen vacancies in the In 2 O 3 host due to the charge difference. ,,,, Assuming that each oxygen vacancy donates two electrons to the conduction band, the overall electron concentration of IZO is therefore increased. On the other hand, Zn 2+ dopants are electrically not active due to the formation of neutral complexes with oxygen vacancies .…”