Synthesis, characterization and ellipsometric study of ultrasonically sprayed Co3O4 films

Gençyılmaz, Olcay; Taşköprü, T.; Atay, Ferhunde; Akyüz, I.

doi:10.1007/s00339-015-9417-4

Cited by 10 publications

(4 citation statements)

References 42 publications

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“…5 is a plot of refractive index, n, and extinction coefficient, k, vs. wavelength, representative of as-deposited Co3O4 films. The behavior of n and k vs. wavelength are consistent with previous reports of ultrasonically sprayed Co3O4 films (14). The 1000 cycle ~50 nm thick as-deposited film exhibits an n of approximately 2.8 at 632.8 nm.…”

Section: Crystallinity and Morphologysupporting

confidence: 90%

Characterization of Atomic Layer Deposited Cobalt Oxide

2018

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The electrical, optical, and structural properties of cobalt oxide films deposited via atomic layer deposition using Co(Cp)2 and O3 are investigated. At 250 °C, growth is 0.50 Å per cycle and smooth uniform films are deposited across a 5" wafer with atomic force microscopy showing a root mean square roughness of 0.4 nm. Spectroscopic ellipsometry indicates a refractive index of approximately 2.8 at 632.8 nm while grazing incidence X-ray diffraction of as-deposited films shows cubic Co3O4, a p-type semiconducting phase. Semiconducting behavior is supported by current density versus electric field measurements.

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Section: Crystallinity and Morphologysupporting

confidence: 90%

Characterization of Atomic Layer Deposited Cobalt Oxide

2018

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“…Consequently, there are two optical band gaps, Eg1 and Eg2, where Eg1 is assigned to 𝑂 /F → 𝐶𝑜 ,: charge transfer whilst Eg2 is assigned to 𝑂 /F → 𝐶𝑜 /: charge transfer. Eg2 is considered as the true energy gap that corresponds to inter-band transitions (VB to CB excitation) [54]. As presented in table 2, the values of Eg1 decrease for increasing doping ratio while the value of Eg2 increases with doping.…”

Section: Optical Characterizationmentioning

confidence: 99%

Outstanding stability and photoelectrochemical catalytic performance of (Fe, Ni) co-doped Co3O4 photoelectrodes for solar hydrogen production

Abdelmoneim

Naji

Wagenaars

et al. 2021

International Journal of Hydrogen Energy

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“…Another reason for the decline in transmission is the higher film absorption associated with larger film thickness [31], which is easily evident from the appearance of the black color. Nevertheless, the increase of T for sample 0.1 mol/L due to the film porosity which in turn reduces light scattering [33] and allowing additional light to pass through. This observation is confirmed by the morphological results.…”

Section: Transmittance Reflectance Absorption Coefficient Optical Ene...mentioning

confidence: 99%

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

Ben Messaoud,

Ouahab,

Rahmane

et al. 2024

Period. Polytech. Chem. Eng.

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The work in hand presents the elaboration of CuO thin films using a home-made spray pyrolysis technique at room atmosphere. The films were synthesized on preheated glass substrate at 450 °C. The source solution molarity was varied from 0.025 to 0.1 mol/L. The films were characterized by employing X-Ray Diffraction technique, UV-Vis-NIR spectrophotometry, Scanning Electron Microscope imagery, Energy Dispersive Spectroscopy, and four-points probe techniques. The X-ray diffraction analysis confirmed that all films are polycrystalline with a preferred orientation along the plane (−111) of the monoclinic crystal structure phase of tenorite (CuO). The SEM images showed a homogeneous and smooth surface. Crystallinity and grain size were improved. The rise of solution concentration induced a reduction of transmittance and reflectance in the visible region. The energy gap, the absorption coefficient, the extinction coefficient, refractive index, dielectric constant (ԑr and ԑi) and loss energy were estimated from transmittance and reflectance data. The gap energy decreases from 2.72 to 2.56 eV. The film deposited for 0.025 mol/L exhibits the highest real part of the dielectric constant (ԑr ~ 17). The film resistivity which is in order of 102 Ω cm decreases with the increase of molar concentration. The estimated dielectric constant indicated that the resulting CuO thin films could be used as dielectric layers for optoelectronic devices working in Vis-NIR region of radiation. Furthermore, the relatively high band gap, high absorption coefficient and high conductivity of the film obtained at 0.075 mol/L, make them good candidates as absorption layers in solar cells applications.

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Synthesis, characterization and ellipsometric study of ultrasonically sprayed Co3O4 films

Cited by 10 publications

References 42 publications

Characterization of Atomic Layer Deposited Cobalt Oxide

Characterization of Atomic Layer Deposited Cobalt Oxide

Outstanding stability and photoelectrochemical catalytic performance of (Fe, Ni) co-doped Co3O4 photoelectrodes for solar hydrogen production

Optoelectronic and Dielectric Properties of Tenorite CuO Thin Films Sprayed at Various Molar Concentrations

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