Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

Zhong, Degao; Teng, Bing; Cao, Lifeng; Zhang, Shiming; You, Fangtian; Zhang, Bingtao; Li, Jianhong; Tian, Xuemin; Wang, Chao; Li, Yuyi; He, Ling; Rupp, R. A.

doi:10.1039/c4ce00042k

Cited by 8 publications

(3 citation statements)

References 21 publications

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“…It was ascertained that the FWHM was about 13 nm at 1013 nm; therefore, a large bandwidth indicates that Yb:CNGS was an excellent ultrafast laser material. [28][29][30][31] Fig. 3 Specific heat (a), thermal expansion (b), thermal diffusion coefficient (c), and thermal conductivity (d) of Yb:CNGS versus temperature.…”

Section: Spectral Propertiesmentioning

confidence: 99%

Growth, thermal and laser properties of a new self-frequency-doubling Yb:CNGS crystal

et al. 2016

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A new optical single-crystal Yb:CNGS (Yb:Ca 3 NbGa 3 Si 2 O 14 ) was grown successfully for self-frequencydoubling with the sizes of 25 mm in diameter and 50 mm in length using the Czochralski methods. We studied the thermal properties of these crystals systematically, including the thermal expansion coefficient, specific heat, thermal diffusion coefficient, and the thermal conductivity. The absorption and fluorescence spectra of Yb:CNGS crystal were measured. The absorption spectra show a broad transmission range from 350 to 3500 nm. The continuous-wave (CW) laser output at 1060 nm was demonstrated with aand c-cut crystal. The maximum output power was about 1.53 W under a 4.03 W incident power with z-cut crystals.The slope efficiency was as high as 47.8%. An efficient CW self-frequency-doubling (SFD) green laser was performed with a diode-pumped Yb:CNGS laser. The CW green output power was 37.1 mW and the wavelength tunability from 526 to 532 nm with input pump power as been demonstrated.

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Section: Spectral Propertiesmentioning

confidence: 99%

Growth, thermal and laser properties of a new self-frequency-doubling Yb:CNGS crystal

et al. 2016

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“…[8,9]), their partially disordered structure leads to an inhomogeneous broadening of their absorption and luminescence lines, which has a positive effect on their laser characteristics (see, e.g. [10][11][12]). Among the rare-earth REVO 4 vanadates, there are also crystals with a C h 2 5 -monoclinic monazite-type (CePO 4 ) structure.…”

Section: Introductionmentioning

confidence: 99%

Monoclinic m-LaVO₄—a novel high Raman gain SRS-active crystal

Kaminskii¹,

Yu²,

Zhang³

et al. 2014

Laser Phys.

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Monoclinic m-LaVO 4 , having a monazite-type structure and being known as a host crystal for Nd 3+ -lasants, is an attractive χ (3) -nonlinear optical material for Raman laser converters. This paper presents the stimulated Raman scattering (SRS) spectroscopy of m-LaVO 4 in the visible and near-IR spectral range using picosecond laser excitation. High-order SRS and Raman-induced four-wave parametric mixing processes result in an almost two-octave-wide Stokes and anti-Stokes frequency comb. All the measured spectral lines were assigned to the participating molecular vibration modes of the studied vanadate. Finally, an estimation of the steady-state Raman gain coefficient for first Stokes generation in near-IR was performed.

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“…Due to the many advantages of the Yb-ion, laser output in continuous-wave (CW) mode has been realized in various host crystals. In 1971, laser action was realized for the first time with Yb 3+ -doped yttrium aluminum garnet (Yb:YAG) crystal, generating a maximum power of 0.7 W. 2) Since then, CW laser operation has been achieved with different kinds of Yb 3+ -doped rare earth oxide host crystals, such as borates, [3][4][5][6] vanadates, [7][8][9][10] tungstates, [11][12][13][14] and silicates. 15) Rare earth orthophosphate crystal is an important class of laser host crystals, which is very similar to the widely used rare earth vanadate crystals.…”

mentioning

confidence: 99%

Continuous-wave and passively Q-switched Yb:YPO₄ microchip laser with two-dimensional MoS₂ saturable absorber

Feng

Kong

Zhu

et al. 2019

Appl. Phys. Express

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The passively Q-switched laser operation was realized in Yb:YPO4 crystals with a few-layer MoS2 serving as saturable absorber. With the output coupling of T = 5%, a laser pulse of 0.29 W was obtained. The pulse energy, pulse width and peak power were respectively 0.33 μJ, 77 ns and 4.29 W. In addition, efficient continuous-wave (CW) lasers were also achieved. When the absorption pump power was 4.3 W, a CW laser output power of 1.71 W was generated with a slope efficiency of 44.3%. The current results demonstrate that Yb:YPO4 is a kind of microchip laser material with great application potential.

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Synthesis, growth, defects and laser action of Yb:Y_0.71Lu_0.29VO₄ crystals

Abstract: A new promising mixed laser crystal of the composition Yb:Y0.79Lu0.21VO4 was grown and realized, achieving a continuous-wave laser output.

Cited by 8 publications

References 21 publications

Growth, thermal and laser properties of a new self-frequency-doubling Yb:CNGS crystal

Growth, thermal and laser properties of a new self-frequency-doubling Yb:CNGS crystal

Monoclinic m-LaVO₄—a novel high Raman gain SRS-active crystal

Continuous-wave and passively Q-switched Yb:YPO₄ microchip laser with two-dimensional MoS₂ saturable absorber

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Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

Abstract: A new promising mixed laser crystal of the composition Yb:Y0.79Lu0.21VO4 was grown and realized, achieving a continuous-wave laser output.

Cited by 8 publications

References 21 publications

Growth, thermal and laser properties of a new self-frequency-doubling Yb:CNGS crystal

Growth, thermal and laser properties of a new self-frequency-doubling Yb:CNGS crystal

Monoclinic m-LaVO4—a novel high Raman gain SRS-active crystal

Continuous-wave and passively Q-switched Yb:YPO4 microchip laser with two-dimensional MoS2 saturable absorber

Contact Info

Product

Resources

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Synthesis, growth, defects and laser action of Yb:Y_0.71Lu_0.29VO₄ crystals

Monoclinic m-LaVO₄—a novel high Raman gain SRS-active crystal

Continuous-wave and passively Q-switched Yb:YPO₄ microchip laser with two-dimensional MoS₂ saturable absorber